Uzodinma Okoroanyanwu is a research associate professor in the department of polymer science and engineering of University of Massachusetts at Amherst. His research interests are broadly geared toward developing printed, flexible, flexible hybrid, and wearable electronic sensor platforms used in point-of-care diagnostics and environmental monitoring. He is also the founder and chief executive officer of Enx Labs (formerly called ALLNANO LLC), a company that develops electronic instruments used in molecular diagnostics, energy storage, and environmental monitoring. He worked previously at Advanced Micro Devices, where he spent 12 years conducting research on advanced lithography and on organic polymer memories, and at GLOBALFOUNDRIES, where he spent 4 years conducting research on advanced lithography. He has published extensively on lithography science and technology and on electronic applications of polymers. His books include: Molecular Theory of Lithography (published in 2015) and Chemistry and Lithography (published in 2010). A holder of 37 U.S patents, he was educated at The University of Texas at Austin, where he earned the following degrees: Ph.D. physical chemistry (1997), M.S. chemical engineering (1995), M.A. physical chemistry (1994), B.S. Chemistry and Chemical engineering (1991).
Production aspects of 45nm immersion lithography defect monitoring using laser DUV inspection methodology
Initial experience establishing an EUV baseline lithography process for manufacturability assessment
Experimental investigation of fabrication process-, transportation-, storage, and handling-induced contamination of 157nm reticles and vacuum-UV cleaning
Impact of photo-induced species in O2-containing gases on lithographic patterning at 193-nm wavelength
Impact of optical absorption on process control for sub-0.15-nm device patterning using 193-nm lithography
Defect printability for sub-0.18-micron design rules using 193-nm lithography process and binary OPC reticle
Novel functional nortricyclene polymers and copolymers for 248- and 193-nm chemically amplified resists