The Monte Carlo model of the impact ionization in deep submicron MOSFETs is worked out. This model allows the influence of the secondary charge carrier current on the drain current to be evaluated. The developed model is built on the basis of the reduction scheme. Moreover, the model takes into account all the major features of electron transport in deep submicron MOSFETs, the dominant scattering mechanisms, the quantization of electron spectrum as well as the modeling of constructive parameters and basic drain breakdown mechanisms.
In this article the results of calculation of electron scattering rates and the drift velocity of these particles in free standing in vacuum GaAs quantum wire, electron scattering rates via polar optical and acoustic phonons in transistor device structure based on GaAs-in-AlAs quantum wire versus gate voltage, the electric current in armchair single-wall carbon nanotube versus strength of electric field applied along the channel and temperature are presented.
In present investigation the function of average value of drift velocity versus electric field strength in GaAs quantum wires with various dimensions at temperature T=77 K at electric quantum limit is studied. In the framework of the eveloped model the nonparabolicity is taken into account. The scattering rates in the considered structures are calculated with account both noncollisional and collisional broadening of energy levels.
The ensemble Monte Carlo algorithm for simulation of charge carrier transport in short channel MOSFET was developed. The mobile charge carrier concentration and electrostatic potential calculation procedures were worked out. The drain current increasing mechanisms caused by secondary holes transport in short channel MOSFET were considered. It was found out that at channel length about 0.1 μm the influence of secondary holes transport is quite significant.
The generation of electron drift velocity oscillations in GaAs-quantum wires with finite length at temperature T=77 K in uniform as well as nonuniform field is studied. The influence of wire length and dominant scattering processes on the amplitude, frequency and attenuation of the oscillations is investigated. The average time of electron drift in the various regions of the quantum wire is calculated.