High temperature Hall-effect investigations were used to study the change of the concentration and mobility of charge-carriers in Cd<sub>0.85</sub>Mn<sub>0.10</sub>Zn<sub>0.05</sub>Te and Cd<sub>0.85</sub>Mn<sub>0.10</sub>Zn<sub>0.05</sub>Te: In crystals grown by the vertical Bridgman technique. The Cd<sub>0.85</sub>Mn<sub>0.10</sub>Zn<sub>0.05</sub>Te and Cd<sub>0.85</sub>Mn<sub>0.10</sub>Zn<sub>0.05</sub>Te: In samples are characterized by optical and electrical measurements, and by IR-microscopy. We determined that the value of band gap increase with the Mn and Zn amount increasing in the Cd<sub>1-x-y</sub>Mn<sub>x</sub>Zn<sub>y</sub>Te crystals. We also show that after the high-temperature Hall-effect measurements performed under Cd overpressure the both crystals resistivity increase from 10<sup>4</sup> Ohm×cm to 10<sup>6</sup> Ohm×cm, and amount and size of Te inclusions decrease. According to the results of the high temperature Hall-effect investigations the temperatures and Cd vapor pressures intervals were established in which Indium plays major role and controls the concentration of charge carriers.
In this paper, correlation between CMZT melt state and structure properties of crystals, grown by vertical Bridgman method, was investigated. The Cd<sub>0.9-x</sub>Mn<sub>x</sub>Zn<sub>0.1</sub>Te crystals with various Mn composition (x = 0.1; 0.2) were grown by two-step preparation method from high purity elemental components. We have conducted series of crystal growth runs with different melt superheating degree over the alloys melting temperature. As a result, we have got the ingots with various crystalline structures and properties. It was concluded that worth crystalline structure had the bulks which were grown from the melt with lowest superheating degree. We have determined also that band gap rose (from 1.67 at x=0.1 to 1.79 eV at x=0.2) with Mn content increasing.
Solid-liquid phase transitions in Cd<sub>0.95-x</sub>Mn<sub>x</sub>Zn<sub>0.05</sub>Te alloys with x = 0.20 and 0.30 were investigated by differential thermal analysis (DTA). The heating/cooling rates were 5 and 10 K/min with a melt dwell time of 10, 30 and 60 minutes. Cd<sub>0.95-x</sub>Mn<sub>x</sub>Zn<sub>0.05</sub>Te (x=0.20, 0.30) single-crystal ingots were grown by the vertical Bridgman method guided by the DTA results. <p> </p>Te inclusions (1-20 micron diameter), typical of melt-grown CdTe and Cd(Zn)Te crystals, were observed in the ingots by infrared transmission microscopy. The measured X-ray diffraction patterns showed that all compositions are found to be in a single phase. Using current-voltage (I-V) measurements, the resistivity of the samples from each ingot was estimated to be about 105 Ohm·cm. The optical transmission analysis demonstrated that the band-gap of the investigated ingots increased from 1.77 to 1.88 eV with an increase of the MnTe content from 20 to 30 mol. %.
In this paper, we have investigated some structural properties, Raman spectra of Zn<sub>1-x</sub>Mn<sub>x</sub>T<sub>e</sub> films deposited by the closed space vacuum sublimation under different growth conditions. The obtained results of the Raman spectroscopy and XRD analysis show single phase composition of the samples. The presence of phonon replicas in the Raman spectra of the films indicates their high structural quality. The manganese content (about 7 %) in the layers was determined
according to shifting the relative peaks positions.
Peculiarities of Cd<sub>0.95-x</sub>Mn<sub>x</sub>Zn<sub>0.05</sub>Te (x=0.05-0.25) alloys melting and crystallization kinetics were investigated by the differential thermal analysis at various heating/cooling rates. We synthesized Cd<sub>0.95-x</sub>Mn<sub>x</sub>Zn<sub>0.05</sub>Te alloys from elemental materials in a double-zone furnace. Their melting-crystallization rate was 5- and 10-K/min with a melt-dwell time of 1-, 10-, 20-, and 30-minutes. We found that the melting temperature, T<sub>m</sub>, declined with increasing “x”, while the crystallization temperature, T<sub>s</sub>, rose with increasing “x”. We detailed the dependencies of the crystallization rate versus the melt’s crystallization temperature. In most cases, the dependencies dropped with the rise of the crystallization temperature, while the crystallization temperature fell with decreasing melt-dwell time.