The measurement of heterojunction band parameters and their spatial variation is of fundamental importance for the operation of heterostructure devices. Ballistic electron emission microscopy (BEEM) is a powerful, new low energy electron microscopy for imaging and spectroscopy of buried quantum objects and non-destructive local characterization of buried semiconductor heterostructures with nm resolution. We will present several new and novel applications of BEEM for semiconductor heterostructure characterization.
The use of scanning probe microscopies--such as Scanning Tunneling Microscopy (STM) and Ballistic Electron Emission Microscopy (BEEM) to study carrier transport through semiconductor heterostructures--is reviewed. The ability of BEEM to probe buried structures below the surface can be exploited to study heterostructure band-offsets and resonant tunneling through quantum structures. It will be shown that BEEM can serve as a powerful probe of the spectroscopy of such structures. The implications of such studies for research on quantum dots and the characterization of new optoelectronic materials will be discussed.
Conference Committee Involvement (1)
Quantum Sensing and Nanophotonic Devices IV
22 January 2007 | San Jose, California, United States