Dr. Vibhu Jindal Profile

Dr. Vibhu Jindal

Director at Applied Materials Inc

SPIE Involvement:

Author

Publications (31)

Proceedings Article | 4 September 2015 Paper

Paper

Enabling inspection solutions for future mask technologies through the development of massively parallel E-Beam inspection

Matt Malloy, Brad Thiel, Benjamin Bunday, Stefan Wurm, Vibhu Jindal, Maseeh Mukhtar, Kathy Quoi, Thomas Kemen, Dirk Zeidler, Anna Lena Eberle, Tomasz Garbowski, Gregor Dellemann, Jan Hendrik Peters

Proceedings Volume 9661, 96610O (2015) https://doi.org/10.1117/12.2196120

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Defect inspection, Extreme ultraviolet, Imaging systems, Wafer inspection, Optical inspection, Wafer-level optics, Optics manufacturing

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The new device architectures and materials being introduced for sub-10nm manufacturing, combined with the complexity of multiple patterning and the need for improved hotspot detection strategies, have pushed current wafer inspection technologies to their limits. In parallel, gaps in mask inspection capability are growing as new generations of mask technologies are developed to support these sub-10nm wafer manufacturing requirements. In particular, the challenges associated with nanoimprint and extreme ultraviolet (EUV) mask inspection require new strategies that enable fast inspection at high sensitivity. The tradeoffs between sensitivity and throughput for optical and e-beam inspection are well understood. Optical inspection offers the highest throughput and is the current workhorse of the industry for both wafer and mask inspection. E-beam inspection offers the highest sensitivity but has historically lacked the throughput required for widespread adoption in the manufacturing environment. It is unlikely that continued incremental improvements to either technology will meet tomorrow’s requirements, and therefore a new inspection technology approach is required; one that combines the high-throughput performance of optical with the high-sensitivity capabilities of e-beam inspection.

To support the industry in meeting these challenges SUNY Poly SEMATECH has evaluated disruptive technologies that can meet the requirements for high volume manufacturing (HVM), for both the wafer fab [1] and the mask shop. Highspeed massively parallel e-beam defect inspection has been identified as the leading candidate for addressing the key gaps limiting today’s patterned defect inspection techniques. As of late 2014 SUNY Poly SEMATECH completed a review, system analysis, and proof of concept evaluation of multiple e-beam technologies for defect inspection. A champion approach has been identified based on a multibeam technology from Carl Zeiss. This paper includes a discussion on the need for high-speed e-beam inspection and then provides initial imaging results from EUV masks and wafers from 61 and 91 beam demonstration systems. Progress towards high resolution and consistent intentional defect arrays (IDA) is also shown.

SPIE Journal Paper | 15 May 2015 Open Access

Open Access

Evaluating printability of buried native extreme ultraviolet mask phase defects through a modeling and simulation approach

Mihir Upadhyaya, Vibhu Jindal, Adarsh Basavalingappa, Henry Herbol, Jenah Harris-Jones, Il-Yong Jang, Kenneth Goldberg, Iacopo Mochi, Sajan Marokkey, Wolfgang Demmerle, Thomas Pistor, Gregory Denbeaux

JM3, Vol. 14, Issue 02, 023505, (May 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.023505

KEYWORDS: Extreme ultraviolet, Photomasks, Multilayers, Chemical species, Inspection, Computer simulations, Interfaces, Transmission electron microscopy, Modeling and simulation, Waveguides

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Proceedings Article | 16 March 2015 Paper

Paper

Actinic review of EUV masks: Status and recent results of the AIMS EUV system

Markus Weiss, Dirk Hellweg, Markus Koch, Jan Hendrik Peters, Sascha Perlitz, Anthony Garetto, Krister Magnusson, Renzo Capelli, Vibhu Jindal

Proceedings Volume 9422, 942219 (2015) https://doi.org/10.1117/12.2086265

KEYWORDS: Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Imaging systems, Line width roughness, Scanners, Prototyping, EUV optics, Metrology, Reflectivity

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Proceedings Article | 16 March 2015 Paper

Paper

Evaluating printability of buried native EUV mask phase defects through a modeling and simulation approach

Mihir Upadhyaya, Vibhu Jindal, Adarsh Basavalingappa, Henry Herbol, Jenah Harris-Jones, Il-Yong Jang, Kenneth Goldberg, Iacopo Mochi, Sajan Marokkey, Wolfgang Demmerle, Thomas Pistor, Gregory Denbeaux

Proceedings Volume 9422, 94220Q (2015) https://doi.org/10.1117/12.2175842

KEYWORDS: Photomasks, Extreme ultraviolet, Multilayers, Chemical species, Extreme ultraviolet lithography, Inspection, Monte Carlo methods, Computer simulations, Waveguides, Transmission electron microscopy

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Proceedings Article | 17 April 2014 Paper

Paper

Investigating printability of native defects on EUV mask blanks through simulations and experiments

Mihir Upadhyaya, Vibhu Jindal, Henry Herbol, Il-Yong Jang, Hyuk Joo Kwon, Jenah Harris-Jones, Gregory Denbeaux

Proceedings Volume 9048, 90483L (2014) https://doi.org/10.1117/12.2057761

KEYWORDS: Finite-difference time-domain method, Photomasks, Chemical species, Transmission electron microscopy, Multilayers, Extreme ultraviolet lithography, Extreme ultraviolet, Monte Carlo methods, Atomic force microscopy, Inspection

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Proceedings Article | 17 April 2014 Paper

Paper

Evaluating vacuum components for particle performance for EUV lithography

Yashdeep Khopkar, Gregory Denbeaux, Vibhu Jindal

Proceedings Volume 9048, 90483M (2014) https://doi.org/10.1117/12.2058429

KEYWORDS: Particles, Compound parabolic concentrators, Plasma, Scanning electron microscopy, Extreme ultraviolet lithography, Extreme ultraviolet, Photomasks, Lithography, Nanoparticles, Profilometers

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Proceedings Article | 28 June 2013 Paper

Paper

Defect printability studies at SEMATECH

Il-Yong Jang, Ranganath Teki, Vibhu Jindal, Frank Goodwin, Masaki Satake, Ying Li, Danping Peng, Sungmin Huh, Seong-Sue Kim

Proceedings Volume 8701, 870111 (2013) https://doi.org/10.1117/12.2028069

KEYWORDS: Semiconducting wafers, Double positive medium, Photomasks, Critical dimension metrology, Data modeling, Calibration, Extreme ultraviolet, Extreme ultraviolet lithography, Printing, Inspection

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Proceedings Article | 1 April 2013 Paper

Paper

Challenges in EUV mask blank deposition for high volume manufacturing

V. Jindal, P. Kearney, A. Antohe, M. Godwin, A. John, R. Teki, J. Harris-Jones, E. Stinzianni, Frank Goodwin

Proceedings Volume 8679, 86791D (2013) https://doi.org/10.1117/12.2012169

KEYWORDS: Extreme ultraviolet, Ions, Photomasks, Ion beams, Extreme ultraviolet lithography, Particles, Yield improvement, Dielectrophoresis, High volume manufacturing, Reflectivity

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Proceedings Article | 1 April 2013 Paper

Paper

Application of phase shift focus monitor in EUVL process control

Lei Sun, Sudhar Raghunathan, Vibhu Jindal, Eric Gullikson, Pawitter Mangat, Iacopo Mochi, Kenneth Goldberg, Markus Benk, Oleg Kritsun, Tom Wallow, Deniz Civay, Obert Wood

Proceedings Volume 8679, 86790T (2013) https://doi.org/10.1117/12.2011342

KEYWORDS: Phase shifts, Extreme ultraviolet lithography, Extreme ultraviolet, Photomasks, Reflectivity, Etching, Diffraction, Diffraction gratings, Inspection, Microscopes

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Proceedings Article | 1 April 2013 Paper

Paper

Defect printability comparing actinic printing with advanced simulation for EUV masks

Il-Yong Jang, Ranganath Teki, Vibhu Jindal, Frank Goodwin, Masaki Satake, Ying Li, Danping Peng, Sungmin Huh, Seong-Sue Kim

Proceedings Volume 8679, 86790H (2013) https://doi.org/10.1117/12.2011493

KEYWORDS: Semiconducting wafers, Double positive medium, Photomasks, Printing, Extreme ultraviolet, Extreme ultraviolet lithography, Transmission electron microscopy, Critical dimension metrology, Inspection, Software development

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Proceedings Article | 1 April 2013 Paper

Paper

Inspection and compositional analysis of sub-20 nm EUV mask blank defects by thin film decoration technique

V. Jindal, A. John, J. Harris-Jones, P. Kearney, A. Antohe, E. Stinzianni, F. Goodwin, T. Onoue

Proceedings Volume 8679, 86791O (2013) https://doi.org/10.1117/12.2012173

KEYWORDS: Extreme ultraviolet, Inspection, Particles, Photomasks, Thin films, Transmission electron microscopy, Dielectrophoresis, Extreme ultraviolet lithography, Failure analysis, Defect inspection

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SPIE Journal Paper | 6 February 2013

Applications of advanced metrology techniques for the characterization of extreme ultraviolet mask blank defects

Jenah Harris-Jones, Emilio Stinzianni, Chihcheng Lin, Vibhu Jindal, Ranganath Teki, Hyuk Joo Kwon

JM3, Vol. 12, Issue 01, 013007, (February 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.1.013007

KEYWORDS: Extreme ultraviolet, Transmission electron microscopy, Metrology, Scanning electron microscopy, Particles, Photomasks, Multilayers, Ion beams, Smoothing, Molybdenum

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Proceedings Article | 8 November 2012 Paper

Paper

Particle transport in plasma systems for development of EUVL mask blanks

Peter Stoltz, Alex Likhanskii, Chuandong Zhou, Vibhu Jindal, Patrick Kearney

Proceedings Volume 8522, 852210 (2012) https://doi.org/10.1117/12.979599

KEYWORDS: Plasma, Particles, Extreme ultraviolet lithography, Photomasks, Plasma systems, Extreme ultraviolet, Ions, Sputter deposition, Argon, Acquisition tracking and pointing

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Proceedings Article | 17 April 2012 Paper

Paper

Advanced metrology techniques for the characterization of EUV mask blank defects

Jenah Harris-Jones, Vibhu Jindal, C. C. Lin, Tonmoy Chakraborty, Emilio Stinzianni, Ranganath Teki, Hyuk Joo Kwon

Proceedings Volume 8352, 83520Y (2012) https://doi.org/10.1117/12.922909

KEYWORDS: Extreme ultraviolet, Photomasks, Transmission electron microscopy, Metrology, Scanning electron microscopy, Deposition processes, Spectroscopy, Atomic force microscopy, Extreme ultraviolet lithography, Ions

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Proceedings Article | 17 April 2012 Paper

Paper

EUV mask defects and their removal

Abbas Rastegar, Vibhu Jindal

Proceedings Volume 8352, 83520W (2012) https://doi.org/10.1117/12.923882

KEYWORDS: Extreme ultraviolet, Multilayers, Photomasks, Particles, Inspection, Extreme ultraviolet lithography, Defect detection, Reflectivity, Ruthenium, Deposition processes

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Proceedings Article | 23 March 2012 Paper

Paper

Developing particle detection test bench for vacuum components

Yashdeep Khopkar, Henry Herbol, Mihir Upadhyaya, Gregory Denbeaux, Vibhu Jindal, Patrick Kearney

Proceedings Volume 8322, 832225 (2012) https://doi.org/10.1117/12.919689

KEYWORDS: Particles, Optical proximity correction, Photomasks, Compound parabolic concentrators, Atmospheric particles, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Scanning electron microscopy, Detector development

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Proceedings Article | 23 March 2012 Paper

Paper

Understanding the ion beam in EUV mask blank production

Patrick Kearney, Vibhu Jindal, Alfred Weaver, Pat Teora, John Sporre, David Ruzic, Frank Goodwin

Proceedings Volume 8322, 83221U (2012) https://doi.org/10.1117/12.916510

KEYWORDS: Etching, Ion beams, Ions, Photomasks, Semiconducting wafers, Extreme ultraviolet, Plasma, Oxides, Extreme ultraviolet lithography, Reflectivity

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Proceedings Article | 23 March 2012 Paper

Paper

Smoothing of substrate pits using ion beam deposition for EUV lithography

Jenah Harris-Jones, Vibhu Jindal, Patrick Kearney, Ranganath Teki, Arun John, Hyuk Joo Kwon

Proceedings Volume 8322, 83221S (2012) https://doi.org/10.1117/12.916390

KEYWORDS: Photomasks, Transmission electron microscopy, Extreme ultraviolet, Multilayers, Extreme ultraviolet lithography, Ion beams, Surface roughness, Atomic force microscopy, Ions, Chemical species

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Mitigation of pit-type defects proves to be a major hurdle facing the production of a defect-free mask blank for EUV lithography. Recent efforts have been directed toward substrate smoothing methods during deposition. The angle of incidence of the substrate is known to have a significant effect on the growth of defects during deposition. It has been shown that shadowing effects for bump-type defects are reduced when depositing Mo/Si films at near-normal incidence, resulting in a Gaussian growth profile in which the height and volume of the defect are minimized. Conversely, operating at off-normal incidence reduces shadowing of pit-type defects. When altering the angle of incidence of the substrate, the target angle must be changed to maintain uniformity. The resulting mask blank must also meet surface roughness specifications post-deposition while maintaining a low defect density. In this study, various substrate angle and target angle combinations were investigated within the Veeco Nexus Low Defect Density tool at SEMATECH to find optimum in situ pit smoothing conditions using ion beam deposition on both quartz and low thermal expansion material (LTEM) substrates. The possible substrate-target angle combinations are limited by the design of the current deposition tool; therefore, a phase space has been mapped out to determine uniform and non-uniform regions. Other deposition parameters including operating pressure and working gas composition were also explored. After deposition, EUV reflectrometry measurements were taken to evaluate uniformity in the wavelength; surface roughness, change in pit depth, change in full width at half maximum, and pit smoothing power were determined using atomic force microscopy (AFM); transmission electron microscopy (TEM) was used to study the effect of film disruption through the multilayer; and the printability of smoothed pits will be measure actinically using SEMATECH's AIT tool. Preliminary results show that positive values for substrate angles in the uniform region tend to give a high surface roughness after multilayer deposition; however, the combinations with negative substrate angles show promising results. Substrate angles with lower values resulted in better smoothing than the higher substrate angles. AFM results confirmed that pit smoothing power at lower substrate angles is greater than under the standard deposition conditions employed by the tool. Lower chamber pressure was proven to increase the smoothing power of pit-type defects during deposition. Preliminary TEM cross-section data confirmed the smoothing results obtained by AFM analysis. The use of Ne and Xe as working gases is also under review. Extensive AFM analysis, TEM cross-sections, and printability data will be presented.

Proceedings Article | 23 March 2012 Paper

Paper

A simulation study of cleaning induced EUV reflectivity loss mechanisms on mask blanks

Mihir Upadhyaya, Gregory Denbeaux, Arun John Kadaksham, Vibhu Jindal, Jenah Harris-Jones, Byunghoon Lee, Frank Goodwin

Proceedings Volume 8322, 832223 (2012) https://doi.org/10.1117/12.917972

KEYWORDS: Reflectivity, Extreme ultraviolet, Photomasks, Etching, Ruthenium, Multilayers, Surface roughness, Particles, Mask cleaning, Oxidation

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Proceedings Article | 23 March 2012 Paper

Paper

Origin of EUV mask blank defects from ion beam deposition

H. Yu, D. Andruczyk, D. Ruzic, V. Jindal, P. Kearney, Y. Jiang

Proceedings Volume 8322, 83221T (2012) https://doi.org/10.1117/12.916481

KEYWORDS: Particles, Silicon, Sputter deposition, Ruthenium, Ion beams, Extreme ultraviolet, Ions, Photomasks, Monte Carlo methods, Extreme ultraviolet lithography

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Proceedings Article | 23 March 2012 Paper

Paper

Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks

V. Jindal, P. Kearney, J. Sohn, J. Harris-Jones, A. John, M. Godwin, A. Antohe, R. Teki, A. Ma, F. Goodwin, A. Weaver, P. Teora

Proceedings Volume 8322, 83221W (2012) https://doi.org/10.1117/12.916580

KEYWORDS: Extreme ultraviolet, Photomasks, Ions, Extreme ultraviolet lithography, Ion beams, Particles, Silicon, Molybdenum, Ruthenium, Chemical species

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Proceedings Article | 23 March 2012 Paper

Paper

Modeling the ion beam target interaction to reduce defects generated by ion beam deposition

Thomas Cardinal, Daniel Andruczyk, He Yu, Vibhu Jindal, Patrick Kearney, David Ruzic

Proceedings Volume 8322, 83222Q (2012) https://doi.org/10.1117/12.916878

KEYWORDS: Ions, Ion beams, Monte Carlo methods, Etching, Extreme ultraviolet, Photomasks, Silicon, Sputter deposition, Semiconducting wafers, Extreme ultraviolet lithography

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Proceedings Article | 8 April 2011 Paper

Paper

Plasma-assisted cleaning by metastable-atom neutralization (PACMAN): a plasma approach to cleanliness in lithography

W. Lytle, D. Andruczyk, V. Jindal, D. Ruzic

Proceedings Volume 7969, 796927 (2011) https://doi.org/10.1117/12.881038

KEYWORDS: Plasma, Helium, Electrons, Photomasks, Particles, Extreme ultraviolet, Ions, Lithography, Carbon, Chemical species

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Proceedings Article | 8 April 2011 Paper

Paper

Dependence of contamination rates on key parameters in EUV optics

Yashdeep Khopkar, Petros Thomas, Leonid Yankulin, Rashi Garg, Chimaobi Mbanaso, Alin Antohe, Mihir Upadhyaya, Vimal Kumar Kamineni, Yu-Jen Fan, Gregory Denbeaux, Vibhu Jindal, Andrea Wüest, Eric Gullikson

Proceedings Volume 7969, 796923 (2011) https://doi.org/10.1117/12.879491

KEYWORDS: Contamination, Carbon, Extreme ultraviolet, Ruthenium, EUV optics, Polymers, Polymerization, Polymer thin films, Mirrors, Extreme ultraviolet lithography

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Proceedings Article | 7 April 2011 Paper

Paper

Modeling the EUV multilayer deposition process on EUV blanks

V. Jindal, P. Kearney, Jenah Harris-Jones, Alan Hayes, Jacques Kools

Proceedings Volume 7969, 79691A (2011) https://doi.org/10.1117/12.879467

KEYWORDS: Chemical species, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Silicon, Molybdenum, Deposition processes, Monte Carlo methods, Multilayers, Particles

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Proceedings Article | 29 March 2011 Paper

Paper

SEMATECH's infrastructure for defect metrology and failure analysis to support its EUV mask defect reduction program

V. Jindal, C. C. Lin, J. Harris-Jones, J. Kageyama

Proceedings Volume 7969, 79690I (2011) https://doi.org/10.1117/12.879466

KEYWORDS: Extreme ultraviolet, Photomasks, Metrology, Transmission electron microscopy, Scanning transmission electron microscopy, Spectroscopy, Particles, Failure analysis, Extreme ultraviolet lithography, Image resolution

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Proceedings Article | 23 March 2010 Paper

Paper

Wavelength dependence of carbon contamination on mirrors with different capping layers

Petros Thomas, Leonid Yankulin, Yashdeep Khopkar, Rashi Garg, Chimaobi Mbanaso, Alin Antohe, Yu-Jen Fan, Gregory Denbeaux, Samir Aouadi, Vibhu Jindal, Andrea Wüest

Proceedings Volume 7636, 76361X (2010) https://doi.org/10.1117/12.847015

KEYWORDS: Contamination, Extreme ultraviolet, Carbon, Mirrors, Extreme ultraviolet lithography, Xenon, Error analysis, Neodymium, Ruthenium, Titanium dioxide

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Proceedings Article | 23 March 2009 Paper

Paper

Assumptions and trade-offs of extreme ultraviolet optics contamination modeling

V. Jindal, R. Garg, G. Denbeaux, A. Wüest

Proceedings Volume 7271, 72713Q (2009) https://doi.org/10.1117/12.814188

KEYWORDS: Carbon, Contamination, Molecules, Electrons, Radiation effects, EUV optics, Extreme ultraviolet lithography, Photons, Molecular interactions, Ruthenium

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Proceedings Article | 15 September 2005 Paper

Paper

Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate

F. Shahedipour-Sandvik, J. Grandusky, M. Jamil, V. Jindal, S. Schujman, L. Schowalter, R. Liu, F. Ponce, M. Cheung, A. Cartwright

Proceedings Volume 5941, 594107 (2005) https://doi.org/10.1117/12.617829

KEYWORDS: Aluminum nitride, Indium gallium nitride, Sapphire, Luminescence, Transmission electron microscopy, Gallium nitride, Diffraction, Crystals, Quantum wells, Optical spectroscopy

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Proceedings Article | 14 September 2005 Paper

Paper

Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering

M. Jamil, J. Grandusky, V. Jindal, F. Shahedipour-Sandvik, S. Guha, M. Arif

Proceedings Volume 5941, 59411E (2005) https://doi.org/10.1117/12.617704

KEYWORDS: Gallium nitride, Silicon, Aluminum nitride, Ions, Raman spectroscopy, Luminescence, Annealing, Silicon carbide, Interfaces, Optoelectronic devices

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Proceedings Article | 14 September 2005 Paper

Paper

Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD

J. Grandusky, M. Jamil, V. Jindal, J. DeLuca, S. LeBoeuf, X. Cao, S. Arthur, F. Shahedipour-Sandvik

Proceedings Volume 5941, 59410W (2005) https://doi.org/10.1117/12.617658

KEYWORDS: Light emitting diodes, Electroluminescence, Magnesium, Gallium, Doping, Gallium nitride, Diffractive optical elements, Metalorganic chemical vapor deposition, Silicon, Indium gallium nitride

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Showing 5 of 31 publications

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