Dr. Vimal Kamineni Profile

Dr. Vimal Kamineni

Principal Research Engineer at GLOBALFOUNDRIES Inc

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Publications (10)

SPIE Journal Paper | 14 March 2016

Optical critical dimension metrology for directed self-assembly assisted contact hole shrink

Dhairya Dixit, Avery Green, Erik Hosler, Vimal Kamineni, Moshe Preil, Nick Keller, Joseph Race, Jun Sung Chun, Michael O’Sullivan, Prasanna Khare, Warren Montgomery, Alain Diebold

JM3, Vol. 15, Issue 01, 014004, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.1.014004

KEYWORDS: Directed self assembly, Critical dimension metrology, Scatterometry, Polymethylmethacrylate, Optical components, Picosecond phenomena, Optical simulations, Chemical elements, Optical lithography, Ellipsometry

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SPIE Journal Paper | 3 August 2015 Open Access

Sensitivity analysis and line edge roughness determination of 28-nm pitch silicon fins using Mueller matrix spectroscopic ellipsometry-based optical critical dimension metrology

Dhairya Dixit, Samuel O’Mullane, Sravan Sunkoju, Abhishek Gottipati, Erik Hosler, Vimal Kamineni, Moshe Preil, Nick Keller, Joseph Race, Gangadhara Raja Muthinti, Alain Diebold

JM3, Vol. 14, Issue 03, 031208, (August 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.3.031208

KEYWORDS: Line edge roughness, Silicon, Scatterometry, Data modeling, Optical components, Scanning electron microscopy, Picosecond phenomena, Chemical elements, Line width roughness, Optical properties

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SPIE Journal Paper | 10 April 2015 Open Access

Metrology for block copolymer directed self-assembly structures using Mueller matrix-based scatterometry

Dhairya Dixit, Vimal Kamineni, Richard Farrell, Erik Hosler, Moshe Preil, Joseph Race, Brennan Peterson, Alain Diebold

JM3, Vol. 14, Issue 02, 021102, (April 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.021102

KEYWORDS: Silicon, Picosecond phenomena, Scatterometry, Anisotropy, Semiconducting wafers, Data modeling, Metrology, Optical lithography, Chemical elements, Directed self assembly

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Proceedings Article | 10 April 2015 Paper

Silicon fin line edge roughness determination and sensitivity analysis by Mueller matrix spectroscopic ellipsometry based scatterometry

Dhairya Dixit, Samuel O'Mullane, Sravan Sunkoju, Erik Hosler, Vimal Kamineni, Moshe Preil, Nick Keller, Joseph Race, Gangadhara Raja Muthinti, Alain Diebold

Proceedings Volume 9424, 94242P (2015) https://doi.org/10.1117/12.2185543

KEYWORDS: Line edge roughness, Silicon, Scatterometry, Data modeling, Optical components, Spatial frequencies, Chemical elements, Optical properties, Inverse optics, Critical dimension metrology

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SPIE Journal Paper | 4 November 2014

Assessment of critical dimension small-angle x-ray scattering measurement approaches for FinFET fabrication process monitoring

Charles Settens, Aaron Cordes, Benjamin Bunday, Abner Bello, Vimal Kamineni, Abhijeet Paul, Jody Fronheiser, Richard Matyi

JM3, Vol. 13, Issue 04, 041408, (November 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041408

KEYWORDS: Silicon, Scattering, X-rays, Hydrogen, Critical dimension metrology, Annealing, Metrology, Scatter measurement, Double patterning technology

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Proceedings Article | 2 April 2014 Paper

Sidewall roughness and line profile measurement of photoresist and finFET features by cross-section STEM and TEM image for reference metrology

Kiyoshi Takamasu, Haruki Okitou, Satoru Takahashi, Osamu Inoue, Hiroki Kawada, Vimal Kamineni, Abhijeet Paul, A. Bello

Proceedings Volume 9050, 90501K (2014) https://doi.org/10.1117/12.2046144

KEYWORDS: Scanning transmission electron microscopy, Transmission electron microscopy, Photoresist materials, Metrology, Carbon, Coating, Edge detection, Silicon, Edge roughness

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Proceedings Article | 2 April 2014 Paper

Metrology for directed self-assembly block lithography using optical scatterometry

Dhairya Dixit, Vimal Kamineni, Richard Farrell, Erik Hosler, Moshe Preil, Joseph Race, Brennan Peterson, Alain Diebold

Proceedings Volume 9050, 90500N (2014) https://doi.org/10.1117/12.2047111

KEYWORDS: Scatterometry, Anisotropy, Metrology, Chemical elements, Picosecond phenomena, 3D modeling, Data modeling, Optical lithography, Optical properties, Directed self assembly

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Proceedings Article | 18 April 2013 Paper

Fin stress and pitch measurement using X-ray diffraction reciprocal space maps and optical scatterometry

A. Diebold, M. Medikonda, G. Muthinti, V. Kamineni, J. Fronheiser, M. Wormington, B. Peterson, J. Race

Proceedings Volume 8681, 86810I (2013) https://doi.org/10.1117/12.2023081

KEYWORDS: Silicon, Scatterometry, Diffraction, Anisotropy, Germanium, X-ray diffraction, Crystals, Optical properties, Diffraction gratings, Refractive index

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Proceedings Article | 18 April 2013 Paper

Mueller based scatterometry measurement of nanoscale structures with anisotropic in-plane optical properties

Gangadhara Muthinti, Manasa Medikonda, Jody Fronheiser, Vimal Kamineni, Brennan Peterson, Joseph Race, Alain Diebold

Proceedings Volume 8681, 86810M (2013) https://doi.org/10.1117/12.2011649

KEYWORDS: Scatterometry, Optical properties, Silicon, Anisotropy, 3D modeling, Thin films, Scatter measurement, 3D metrology, Spectroscopy

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The uses of strained channel became prevalent at the 65 nm node and have continued to be a large part of logic device performance improvements in every technology generation. These material and integration innovations will continue to be important in sub-22nm devices, and are already being applied in finFET devices where total available in-channel strains are potentially higher. The measurement of structures containing these materials is complicated by the intrinsic correlation of the measured optical thickness and variation of optical properties with strain, as well as the dramatic reduction in total volume of the device. Optical scatterometry has enabled characterization of the feature shape and dimensions of complex 3D structures, including non-planar transistors and memory structures. Ellipsometric methods have been successfully applied to the measurement of thin films of SiGe and related strained structures. A direction for research is validating that the thin film stress results can be extended into the much more physically complex 3D shape. There are clear challenges in this: the stress in a SiGe fin is constrained to match the underlying Si along one axis, but the sides and top are free, leading to very large strain gradients both along the fin width and height. Practical utilization of optical techniques as a development tool is often limited by the complexity of the scatterometry model and setup, and this added material complexity presents a new challenge. In this study, generalized spectroscopic ellipsometric measurements of strained grating was undertaken, in parallel with reference cross sectional and top down SEM data. The measurements were modeled for both anisotropy calculations, as well as full scatterometry calculations, fitting the strain and structure. The degree to which strain and CD can be quickly quantified in an optical model is discussed. Sum decomposition method has been implemented to extract the effective anisotropic coefficients and a discussion on the effect of anisotropy toward modeling is presented. Finally, errors in the scatterometry measurement are analyzed, and the relative strengths and limitations of these optical measurements compared.

Proceedings Article | 8 April 2011 Paper

Dependence of contamination rates on key parameters in EUV optics

Yashdeep Khopkar, Petros Thomas, Leonid Yankulin, Rashi Garg, Chimaobi Mbanaso, Alin Antohe, Mihir Upadhyaya, Vimal Kumar Kamineni, Yu-Jen Fan, Gregory Denbeaux, Vibhu Jindal, Andrea Wüest, Eric Gullikson

Proceedings Volume 7969, 796923 (2011) https://doi.org/10.1117/12.879491

KEYWORDS: Contamination, Carbon, Extreme ultraviolet, Ruthenium, EUV optics, Polymers, Polymerization, Polymer thin films, Mirrors, Extreme ultraviolet lithography

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Showing 5 of 10 publications

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