Mr. Vinayak Chavan Profile

Vinayak Chavan

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Publications (13)

Proceedings Article | 9 September 2019 Paper

Multiple annealing based photonic tunability for enhanced photo-response of AuGe nanoparticles

Lavi Tyagi, Shubham Mondal, Sritoma Paul, Harshal Rawool, Vinayak Chavan, Subhananda Chakrabarti

Proceedings Volume 11082, 1108228 (2019) https://doi.org/10.1117/12.2529156

KEYWORDS: Nanoparticles, Annealing, Gold, Reflectivity, Gallium arsenide, Plasmonics, Absorbance, Particles, Luminescence, Scattering

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Proceedings Article | 4 March 2019 Presentation + Paper

Improvement in operating temperature of InAs/GaAs quantum-dots-based photodetectors by varying position of localized carriers in active region

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Vinayak Chavan, Pravin Raut, Abhijeet Aanand, Subhananda Chakrabarti

Proceedings Volume 10929, 109290G (2019) https://doi.org/10.1117/12.2508643

KEYWORDS: Modulation, Doping, Gallium arsenide, Quantum dots, Indium arsenide, Photodetectors, Infrared radiation, Heterojunctions, Luminescence

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Proceedings Article | 4 March 2019 Presentation + Paper

Influence of modulation doping on p-i-p quantum-dots (InAs/GaAs)-based infrared detector performance

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Vinayak Chavan, Pravin Raut, Abhijeet Aanand, Subhananda Chakrabarti

Proceedings Volume 10929, 109290K (2019) https://doi.org/10.1117/12.2508533

KEYWORDS: Modulation, Quantum dots, Indium arsenide, Doping, Infrared radiation, Gallium arsenide, Infrared detectors, Luminescence, Photodetectors

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Proceedings Article | 4 March 2019 Paper

Investigation of carrier-confinement and dark current minimization in In0.5Ga0.5As QDIP with the incorporation of In0.21Al0.21Ga0.58As/GaAs capping

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 1092910 (2019) https://doi.org/10.1117/12.2508488

KEYWORDS: Aluminum, Gallium, Indium gallium arsenide, Quantum dots, Heterojunctions, Luminescence, Infrared radiation, Gallium arsenide, Photodetectors

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Proceedings Article | 4 March 2019 Presentation + Paper

Effect of vertical coupling on the performance of mid-infrared InAs-QDIP

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 109290E (2019) https://doi.org/10.1117/12.2508482

KEYWORDS: Heterojunctions, Gallium arsenide, Quantum dots, Mid-IR, Photodetectors, Raman spectroscopy, Infrared radiation

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Proceedings Article | 4 March 2019 Paper

Analysis of strain relaxation and dark current minimization in In(Ga)As QDIP with In0.15Ga0.85As/GaAs capping

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 109290Z (2019) https://doi.org/10.1117/12.2508467

KEYWORDS: Indium gallium arsenide, Indium arsenide, Heterojunctions, Quantum dots, Gallium, Luminescence, Gallium arsenide, Mid-IR, Satellites, Infrared photography

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Proceedings Article | 1 March 2019 Paper

Augmenting optical and structural properties in Zn0.85Mg0.15O thin film with P-B co-doping

Sushama Sushama, Punam Murkute, Hemant Ghadi, Vinayak Chavan, Subhananda Chakrabarti

Proceedings Volume 10919, 109192I (2019) https://doi.org/10.1117/12.2508716

KEYWORDS: Zinc, Magnesium, Phosphorus, Boron, Thin films, Zinc oxide, Oxygen, Doping, Plasma, Ion implantation

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Proceedings Article | 1 March 2019 Paper

Enhanced optical properties with the assimilation of boron and phosphorus dopant in co-doped ZnO thin film

Sushama Sushama, Punam Murkute, Hemant Ghadi, Vinayak Chavan, Subhananda Chakrabarti

Proceedings Volume 10919, 109192H (2019) https://doi.org/10.1117/12.2508688

KEYWORDS: Phosphorus, Zinc oxide, Boron, Thin films, Zinc, Oxygen, Raman spectroscopy, Chemical species, Optical properties, Crystals

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Proceedings Article | 14 May 2018 Presentation + Paper

Heterogeneously coupled InAs Stranski-Krastanov and submonolayer quantum dot infrared photodetector for next-generation IR imaging

D. Das, D. P. Panda, J. Saha, V. Chavan, S. Chakrabarti

Proceedings Volume 10624, 106241S (2018) https://doi.org/10.1117/12.2304763

KEYWORDS: Heterojunctions, Indium arsenide, Infrared imaging, Gallium arsenide, Luminescence, Quantum dots, Photodetectors, Infrared photography

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Proceedings Article | 1 March 2018 Paper

Effect of time varying phosphorus implantation on optoelectronics properties of RF sputtered ZnO thin-films

Punam Murkute, Hemant Ghadi, Shantanu Saha, Vinayak Chavan, Subhananda Chakrabarti

Proceedings Volume 10533, 105332L (2018) https://doi.org/10.1117/12.2288958

KEYWORDS: Zinc oxide, Phosphorus, Thin films, Zinc, Ions, Oxygen, Ion implantation, Excitons, Plasma, Annealing

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Proceedings Article | 1 March 2018 Paper

Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation

Punam Murkute, Hemant Ghadi, Shantanu Saha, Vinayak Chavan, Subhananda Chakrabarti

Proceedings Volume 10533, 105332K (2018) https://doi.org/10.1117/12.2288944

KEYWORDS: Zinc oxide, Annealing, Temperature metrology, Zinc, Thin films, Phosphorus, Scanning electron microscopy, Ion implantation, Raman spectroscopy, Plasma

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Proceedings Article | 21 February 2018 Presentation + Paper

Impact of phosphorus ion implantation on the material and optical properties of InAs/GaAs quantum dots

S. Upadhyay, A. Mandal, V. Chavan, N. B. V. Subrahmanyam, P. Bhagwat, S. Chakrabarti

Proceedings Volume 10543, 1054309 (2018) https://doi.org/10.1117/12.2289543

KEYWORDS: Ions, Phosphorus, Gallium arsenide, Ion implantation, Optical properties, Quantum dots, Satellites, Heterojunctions, Indium arsenide, Luminescence

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Proceedings Article | 21 February 2018 Paper

Effect of various capping layer on the hydrostatic and biaxial strain of InAs QDs in x (100) and z (001) direction

Jhuma Saha, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Subhananda Chakrabarti

Proceedings Volume 10543, 105430U (2018) https://doi.org/10.1117/12.2289961

KEYWORDS: Gallium, Indium arsenide, Gallium arsenide, Heterojunctions, Luminescence, Aluminum, Quantum dots, Laser applications, Optoelectronics

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Showing 5 of 13 publications

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