The use of nanowires has recently emerged to go further in the development of nitride UV LEDs, especially to improve the efficiency or to make micro-sized UV-sources and flexible LEDs/photodetectors. Our current research interest is focused on the core-shell UV quantum wells grown by industrial MOVPE epitaxy tool. Several types of core-shell quantum wells have been successfully achieved: GaN/InAlN for UV-A, GaN/AlGaN or AlGaN/AlGaN for UV-A and UV-B. When the UV GaN/AlGaN QWs are embedded in a core-shell AlGaN p-n junction, the electroluminescence is demonstrated on single-wire μLEDs in the UV-A and UV-B. The further development of core-shell GaN/AlGaN monolayered system is also shown with demonstration of UV-B emission for single-wire μLEDs.
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