We have applied a new generation of short cantilevers with high resonant frequencies to tapping mode atomic force microscopy of a process in situ. Crystal growth in the presence of protein has been imaged stably at 79 lines/s (1.6 s/image), using a 26 micrometers long cantilever with a spring constant of 0.66 N/m at a tapping frequency of 90.9 kHz. This high scan speed nearly eliminated distortion in the step edge motion and allowed imaging of finer features along the step edges. Atomic force microscopy with short cantilevers therefore allows higher resolution imaging of crystal growth in space as well as time.
KEYWORDS: Waveguides, Near field scanning optical microscopy, Silicon, Near field, Near field optics, Optical fibers, Atomic force microscopy, Microfabrication, Light scattering, Stray light
The adaptation of a Digital Instruments DimensionTM 3000 atomic-force microscope to provide a near-field scanning optical microscopy capability is described. The enabling technology for the adaptation is the bent optical fiber probe. The design and operation of this probe to measure evanescent fields emerging from optical waveguides is described.
This paper deals with the effect of C, Co, and Cr additions on the surface profile of Fe78 B13Si9 metallic glass at a nanoscopic scale. The seperate addition of the elements was successful in a way that three new metallic films with better properties were produced. The composition of the new films are namely Feg1B13Si35C2, Fe66C018B15Si1, and FeCr2 B16Si5. Furthermore the new films have shown balanced physical and magnetic properties as compared to the Fe78B13Si9 film. Consequently, this study was focused on revealing the three dimensional surface profile of the films in as-received and annealed conditions. The surface profile was determined by a scanning tunneling microscope (STM).
Surface roughness of a fine metallic film. i.e.. mirror finished. has been determined by
a Scanning Tunneling Microscope (STM). The mean value o the roughness is measured
based on STM images of a three dimensional line plot of the surface profile. The
technique is found capable of determining the roughness in a nanoscopic scale, lO m.
Such technique is used in the present work to measure the roughness of various thin
films ( 1 5 tm) in amorphous and crystalline structures.
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