Dr. Vivek Bakshi Profile

Dr. Vivek Bakshi

President at EUV Litho Inc

SPIE Involvement:

Conference Program Committee | Journal Editorial Board Member | Editor | Author | Instructor

Area of Expertise:

EUV Lithography , Lithography , Semiconductor Manufacturing , Plasma Machines , Plasma Diagnostics

Websites:

Company Website | LinkedIn Website

Profile Summary

Dr. Vivek Bakshi is the president of EUV Litho, Inc., an organization that he formed to promote EUV Lithography via consulting, workshops and education courses. He is a consultant in the area of EUV Lithography and lithography in general. He provides consulting services to investors, funding agencies, universities, national labs and suppliers. He also organizes International Workshop on EUV Lithography, EUV and Soft X-ray Sources and teaches EUV Lithography short courses around the world.

Previously, he was a senior member of the technical staff in SEMATECH’s Lithography Division. Dr. Bakshi has authored/co-authored over 125 technical publications, including book chapters, articles in the peer-reviewed journals, technical reports and trade publications. He has edited two books on EUV Lithography: EUV Sources for Lithography (SPIE Press, 2006) and EUV Lithography (SPIE Press, 2008). He is currently Associate Editor of JM3 (SPIE Journal of Micro/Nano Lithography, MEMS and MOEMS) and Blogger at SST (http://www.electroiq.com/blogs/euvl-focus.html).

Publications (13)

SPIE Press Book | February 8, 2018

EUV Lithography, Second Edition

SPIE Journal Paper | December 27, 2017

Special Section Guest Editorial: EUV Lithography for the 3-nm Node and Beyond

Bakshi, Vivek , Mizoguchi, Hakaru , Liang, Ted , Grenville, Andrew , Benschop, Jos

JM3 Vol. 16 Issue 04

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Optical lithography, Pellicles, Inspection, Optical proximity correction, Free electron lasers, Printing, Scanners

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SPIE Journal Paper | June 13, 2012

Special Section Guest Editorial: EUV Sources for Lithography

Bakshi, Vivek , Yen, Anthony

JM3 Vol. 11 Issue 02

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Metrology, Optical lithography, Semiconductor manufacturing, Laser applications, Laser metrology, High volume manufacturing, Integrated circuits

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SPIE Journal Paper | October 1, 2007

Modeling and optimization of debris mitigation systems for laser and discharge-produced plasma in extreme ultraviolet lithography devices

Sizyuk, Valeryi , Hassanein, Ahmed , Bakshi, Vivek

JM3 Vol. 6 Issue 04

KEYWORDS: Ions, Particles, Extreme ultraviolet, Magnetism, Monte Carlo methods, Systems modeling, Plasma, Tin, Argon, Extreme ultraviolet lithography

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PROCEEDINGS ARTICLE | May 3, 2007

Status report on EUV source development and EUV source applications in EUVL

Proc. SPIE. 6533, 23rd European Mask and Lithography Conference

KEYWORDS: Lithography, Mirrors, Electrodes, Scanners, Xenon, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Plasma, Tin

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PROCEEDINGS ARTICLE | March 15, 2007

Energetic and thermal Sn interactions and their effect on EUVL source collector mirror lifetime at high temperatures

Proc. SPIE. 6517, Emerging Lithographic Technologies XI

KEYWORDS: Mirrors, Chemical species, Particles, Ions, Reflectivity, Extreme ultraviolet, Palladium, Extreme ultraviolet lithography, Ruthenium, Tin

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Exposure of collector mirrors facing the hot, dense pinch plasma in plasma-based EUV light sources remains one of the highest critical issues of source component lifetime and commercial feasibility of EUV lithography technology. Studies at Argonne have focused on understanding the underlying mechanisms that hinder collector mirror performance under Sn exposure and developing methods to mitigate them. Both Sn ion irradiation and thermal evaporation exposes candidate mirrors tested (i.e., Ru, Rh and Pd) in the experimental facility known as IMPACT (Interaction of Materials with charged Particles and Components Testing). Studies have led to an understanding of how Sn energetic ions compared to Sn thermal atoms affect three main surface properties of the collector mirror: 1) surface chemical state, 2) surface structure and 3) surface morphology. All these properties are crucial in understanding how collector mirrors will respond to Sn-based EUV source operation. This is primarily due to the correlation of how variation in these properties affects the reflectivity of photons in the EUV spectral range of interest (in-band 13.5-nm). This paper discusses the first property and its impact on 13.5-nm reflectivity. Investigation in the IMPACT experiment has focused on Sn thermal and energetic particle exposure on collector mirrors (Ru, Pd and Rh) and its effect on mirror performance as a function of incident thermal flux, incident ion flux, incident angle and temperature. This is possible by a new state-of-the-art in-situ EUV reflectometry system that measures real time relative EUV reflectivity at 15-degree incidence and 13.5-nm during Sn exposure. These results are then compared to at-wavelength EUV reflectivity measurements using the newly upgraded NIST-SURF facility. Sn energetic ions at 1- keV and fluxes of about 10¹³ cm^-2s^-1 are used in conjunction with a moderate flux Sn evaporative source delivering Sn fluences ranging from 10¹⁵-10¹⁷ cm^-2. The temperature of the mirror sample is locally varied between 25 and 200 C with the chemical state of the surface simultaneously monitored using X-ray photoelectron spectroscopy, and lowenergy ion scattering spectroscopy. Results demonstrate the balance between energetic and thermal Sn has on the total Sn surface fraction during exposure and its effect on the structural and reflective properties of the mirror surface.

SPIE Press Book | February 23, 2006

EUV Sources for Lithography

PROCEEDINGS ARTICLE | May 6, 2005

Radiation transport modeling for Xe and Sn-doped droplet laser-plasma sources

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Data modeling, Ions, Xenon, Extreme ultraviolet, Optical simulations, Extreme ultraviolet lithography, Spherical lenses, Pulsed laser operation, Plasma, Tin

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PROCEEDINGS ARTICLE | May 6, 2005

Debris characterization and mitigation from microscopic laser-plasma tin-doped droplet EUV sources

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Mirrors, Spectroscopy, Particles, Ions, Reflectivity, Extreme ultraviolet, Plasma generation, Atmospheric particles, Plasma, Tin

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PROCEEDINGS ARTICLE | May 6, 2005

EUV spectroscopy of mass-limited Sn-doped laser micro-plasmas

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Lithium, Spectroscopy, Spectrometers, Ions, Solids, Extreme ultraviolet, Extreme ultraviolet lithography, Pulsed laser operation, Plasma, Tin

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PROCEEDINGS ARTICLE | May 6, 2005

High conversion efficiency microscopic tin-doped droplet target laser-plasma source for EUVL

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Calibration, Spectroscopy, Laser energy, Ions, Xenon, Extreme ultraviolet, Extreme ultraviolet lithography, Pulsed laser operation, Plasma, Tin

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PROCEEDINGS ARTICLE | May 20, 2004

Simulation and optimization of DPP hydrodynamics and radiation transport for EUV lithography devices

Proc. SPIE. 5374, Emerging Lithographic Technologies VIII

KEYWORDS: Opacity, Ions, Diffusion, Magnetism, Integrated modeling, Monte Carlo methods, Extreme ultraviolet, Plasma, Instrument modeling, Absorption

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PROCEEDINGS ARTICLE | May 20, 2004

Experimental investigation of materials damage induced by hot Xe plasma in EUV lithography devices

Proc. SPIE. 5374, Emerging Lithographic Technologies VIII

KEYWORDS: Electrodes, Particles, Copper, Tungsten, Hydrogen, Magnetism, Scanning electron microscopy, Xenon, Extreme ultraviolet, Plasma

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Showing 5 of 13 publications

Conference Committee Involvement (3)

Emerging Lithographic Technologies XII

26 February 2008 | San Jose, California, United States

Emerging Lithographic Technologies XI

27 February 2007 | San Jose, California, United States

Emerging Lithographic Technologies X

21 February 2006 | San Jose, California, United States

Course Instructor

SC888: EUV Lithography

This course provides attendees with a full overview of the fundamentals, current status, and technical challenges of EUV Lithography. Topics covered include EUV Sources, EUV Source Metrology, EUV Optics, EUV systems and patterning, and EUV Mask. We will begin with an overview of the history of EUVL and cover EUV sources, EUV source metrology and EUV optics. Next is a discussion of EUVL systems and patterning. We cover the fundamental components of EUV systems and address similarities and differences to optical lithography systems. This section also covers patterning issues including flare, LER, and resist performance. We continue with an exploration of EUVL Mask technology issues such as design, materials including reflective multilayers, process and metrology. Finally we conclude with a Status Review of EUVL. Course material will be drawn from the accompanying texts EUV Sources for Lithography and EUV Lithography.

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