Volodymyr Gnatyuk (V.A. Gnatyuk) is a Specially Appointed Professor at Research Institute, Shizuoka University, Japan and Senior Scientist at V.E. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine (ISP-NASU), Ukraine. He received his M.S. in theoretical physics from V.N. Karazin Kharkiv National University (1985), Ph.D. in semiconductor & dielectric physics from ISP-NASU (1993), Assoc. Prof. title from Poltava V.G. Korolenko National Pedagogical University (1995), all in Ukraine, and title of Honorable Guest Professor of Shizuoka University (2009-2020), Japan.
V. Gnatyuk is a scientist & project manager with 38 year experience in physics research, education, program/project management & international cooperation. V. Gnatyuk is an expert in semiconductor physics & technology, material science, optics & photonics. The areas of his research are: (i) general: semiconductor physics; interaction of laser radiation with solids; optoelectronics & sensors; (ii) main: characterization of II-VI and III-V semiconductors; laser processing of semiconductors; (iii) current: surface processing and laser-induced doping of semiconductors; development of CdTe-based X/γ-ray and IR detectors; perovskite sensors, laser volumetric marking and digital recording in transparent materials & objects. He has succeeded in development of X/γ-ray detectors based on CdTe Schottky or p-n junction diodes formed by ion bombardment or laser-induced doping, respectively. This has become the basis of long (18 years) collaboration with researchers from Japan (over 230 joint articles/abstracts & 25 projects) as well as from Greece, Germany, Spain, Finland, Latvia, Thailand, China (joint publications & projects). He was a leader (implementer) of over 44 international R&D projects and received over 60 grants for scientific visits. V. Gnatyuk is a (co-)author of over 516 publications (articles, patents & abstracts) in various fields of physics and technology.