The current-voltage characteristics are investigated in single crystals of CdTe doped with Cl. Measured samples were ntype
conductivity with resistivity ρ=(0.5-2.0)×108 Ohm×cm, electron concentration n=(0.5÷2.0)×108 cm-3 and electron mobility μ=280÷300 cm2/Vxs. Experimental data are explained in the framework of theory of highly doped and highly compensated (HDHC) semiconductors. The mobility-lifetime product measured at room temperature is found to be of
the order of (1÷5)x 10-4 cm2xV-1. It means that this material can be used for manufacture of X-ray detectors.