We propose a method for calculating the trajectories of charges particles in a high-voltage gas discharge in nitrogen at a pressure of 0.15 Torr existing in a nonuniform electrostatic field and the strength of this field. The main effect determining the kinetics of charged particles consists in a sharp decrease in the strength of the field under consideration outside the interelectrode space, which allows a free motion of charges with specific energies and trajectories to be generated in it.
We investigated one of the technologies of forming microrelief of diffractive optical elements. The technology is based on using catalytic mask in off-electrode plasma. We have developed a software that allows to evaluate some important parameters of this technological process. First, it is the evaluation of numerical values of concentration profiles "vacancies" and semiconductor atoms in the melt. Second, it is the evaluation of time for irradiation the "metal - semiconductor" structure to achieve the desired depth and the doping concentration of the semiconductor atoms in the melt layer. This enabled to determine the best modes for generating a predetermined height of diffractive microrelief.
Experimental research in deposition of thin CdTe films was carried out using the resistive dynamic vacuum evaporation method. While forming thin CdTe films, temperature parameters of a substrate varied. Parameters of obtained CdTe films were investigated using Raman spectroscopy, scanning profilometry and scanning electron microscopy. The measured results showed high quality of thin CdTe films deposited on the substrate at temperature of 300°C and 450°C.