An adhesion mechanism of thin copper and chromium films fabricated on the surface of dielectric substrates (silicon
dioxide, polycrystalline glass) is studied theoretically and experimentally. It is shown that adhesion increasing is
provided by organic molecules dissociation in the boundary pollution layer of the metal - substrate system as a result of
thermal balance establishment in thin metal film - atomic layer of organic pollution - substrate surface (Me - CxHy - Sub) nanosystem. The maximal adhesion value achieved at process time not less than 3 minutes, current value - 80 mA,
accelerating voltage value - 4 kV. Ion-electron Me - CxHy - Sub structure bombardment increases thin metal films
adhesion not less than in 3.8 ... 10 times. It has been shown that the developed method allows to lower surface
cleanliness requirements, to reduce process time in 10 times, to achieve adhesion value in 1.5 - 2 times higher than
values reached by traditional methods in which substrates with technologically pure surface are used.
The mechanism of dielectric substrate surface cleaning in low-temperature high-voltage gas discharge plasma is theoretically and experimentally investigated. It is shown that the main technological factors that affect surface purity are the time of exposure, discharge current, accelerating voltage. A unique relationship is obtained that relates the value of impurity surface concentration variation to the speed of removing the impurities and exposure duration. It is shown that experimental data agree well with this relationship. It is established that minimal values of impurity surface concentration are achieved at the exposure time no less than 10 seconds, discharge current no less than 3 mA and accelerating voltage of 2-3 kV. An actual example of etching silicon dioxide grooves in high-voltage gas discharge plasma in the mixture of CF4 and O2 is taken to show how substrate surface purity affects geometric parameters of microstructures formed. The results of the investigation made it possible to develop a method of cleaning dielectric substrate surface in high-voltage gas discharge plasma. The method is characterized by low cost and energy consumption. It makes it possible to clean a surface up to the level of 10-9 g/cm2.
This paper suggests using directed flows of low-temperature plasma formed by high-voltage gas discharge to obtain micro and nanostructures on substrate surface. The algorithm and software have been developed which make it possible to automate the process of calculating optimal values of the process parameters by etching microstructures in high-voltage gas discharge plasma. The difference between the experimental results and design data obtained as a result of simulation amounted to less than 10 per cent when investigating the following materials: silicon, silicon dioxide, silicon carbide, diamond films.