Organic Field-effect Transistors (OFETs) with poly(3-alkylthiophene) (P3AT) as semiconductor on flexible polymeric substrate and organic insulator in top gate construction were prepared. These transistors show a high field-effect mobility, good saturation behavior for low biases and rather high on-off ratio. The transistors were characterized through dynamic and lifetime measurements. A switching speed of 38 kHz at a 3 dB modulation depth was reached in a single transistor. The shelf-lives of the transistors exceeded six months without any special encapsulation. In addition different integrated plastic circuits (IPC) were constructed consisting of several organic transistors including NAND/NOR gates, bi-stable flip-flops and ring-oscillators with a oscillating frequency of 68 Hz.
Conference Committee Involvement (1)
Organic Field-Effect Transistors IV
31 July 2005 | San Diego, California, United States
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