Dr. Guosheng Wang Profile

Dr. Guosheng Wang

at 38th Research Institute of CETC

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 8 February 2019 Paper

Study of AlGaN/GaN heterostructures p-i-n ultraviolet detector

Guosheng Wang, Feng Xie, Jun Wang, Run Wang, Cong Li, Jin Guo

Proceedings Volume 10843, 108430A (2019) https://doi.org/10.1117/12.2504959

KEYWORDS: Heterojunctions, Palladium, Ultraviolet radiation, Polarization, Gallium nitride, Photodetectors, Quantum efficiency, Ultraviolet detectors, Semiconductors, Absorption

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Proceedings Article | 8 February 2019 Paper

Enhancement of electroluminescent properties of organic light-emitting device by using exciton adjusting layer

Run Wang, Feng Xie, Guosheng Wang, Jin Guo

Proceedings Volume 10843, 1084307 (2019) https://doi.org/10.1117/12.2504910

KEYWORDS: Microchannel plates, Organic light emitting diodes, Telescopic pixel displays, Excitons, Electrons, Electroluminescence, Energy transfer, Quantum efficiency, Silver, Luminescence

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Proceedings Article | 8 February 2019 Paper

Efficiency enhancement of InGaN/GaN light-emitting diodes with a p-i-n electron blocking layer

Jun Wang, Jin Guo, Junbo Feng, Guosheng Wang, Feng Xie

Proceedings Volume 10843, 1084305 (2019) https://doi.org/10.1117/12.2504893

KEYWORDS: Gallium nitride, Indium gallium nitride, Aluminum nitride, Light emitting diodes, Electroluminescence, Quantum wells, Polarization, Interfaces, Structural design, Electronics

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Proceedings Article | 24 October 2017 Paper

GaN ultraviolet p–i–n photodetectors with enhanced deep ultraviolet quantum efficiency

Guosheng Wang, Feng Xie, Jun Wang, Jin Guo

Proceedings Volume 10460, 104601C (2017) https://doi.org/10.1117/12.2285016

KEYWORDS: Gallium nitride, Photodetectors, Ultraviolet radiation, Deep ultraviolet, Quantum efficiency, Heterojunctions

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Proceedings Article | 24 October 2017 Paper

Improvement of responsivity of GaN-based p-i-n ultraviolet photodetector by inserting a delta doped layer in active region

Jun Wang, Jin Guo, Guosheng Wang, Feng Xie, Li Jin

Proceedings Volume 10462, 104624J (2017) https://doi.org/10.1117/12.2285560

KEYWORDS: Ultraviolet radiation, Photodetectors, Gallium nitride

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Proceedings Article | 19 October 2016 Paper

Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors

Jun Wang, Jin Guo, Feng Xie, Guosheng Wang, Haoran Wu, Man Song, Yuanyuan Yi

Proceedings Volume 10154, 101540N (2016) https://doi.org/10.1117/12.2246472

KEYWORDS: Back illuminated sensors, Gallium nitride, Ultraviolet radiation, Photodetectors, Doping

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Proceedings Article | 10 August 2015 Paper

Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors

Jun Wang, Jin Guo, Feng Xie, Wanjun Wang, Guosheng Wang, Haoran Wu, Tanglin Wang, Man Song

Proceedings Volume 9620, 96200U (2015) https://doi.org/10.1117/12.2191941

KEYWORDS: Doping, Ultraviolet radiation, Gallium nitride, Photodetectors, Instrument modeling, Performance modeling, Numerical simulations, Device simulation, Absorption, Semiconductors

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Showing 5 of 7 publications

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