GaN-based homojunction p-i-n ultraviolet (UV) photodetectors (PDs) with the conventional structure and delta doped layer in the p-n interface are investigated numerically. Using the delta doped n-type layer, the PDs exhibit much higher responsivity and almost does not affect the dark current as compared to conventional one. Simulation results show that the enhancement of the carrier injection from p-type region, which is the main reason behind the improved performance of GaN-based p-i-n PDs employing the delta doping. This beneficial effect is more remarkable in situations with higher p-cap absorption, such as devices with a thickness p-cap layer or devices with a higher Aluminium composition.
GaN ultraviolet (UV) p–i–n photodetectors (PDs) with a thin p-AlGaN/GaN contact layer are designed and fabricated. The PD exhibits a low dark current density of∼7 nA/cm<sup>2</sup> under −5 V, and a zero-bias peak responsivity of ∼0.16 A/W at 360 nm, which corresponds to a maximum quantum efficiency of 55%. It is found that, in the wavelength range between 250 and 365 nm, the PD with thin p-AlGaN/GaN contact layer exhibits enhanced quantum efficiency especially in a deep-UV wavelength range, than that of the control PD with conventional thin p-GaN contact layer. The improved quantum efficiency of the PD with thin p-AlGaN/GaN contact layer in the deep-UV wavelength range is mainly attributed to minority carrier reflecting properties of thin p-AlGaN/GaN heterojunction which could reduce the surface recombination loss of photon-generated carriers and improve light current collection efficiency.
This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.
We report on two-dimensional (2D) numerical simulations of photoresponse characteristics for GaN based p-i-n ultraviolet (UV) photodetectors. Effects of doping density of p-GaN layer on the photoresponse have been investigated. In order to accurately simulate the device performance, the theoretical calculation includes doping-dependent mobility degradation by Arora model and high field saturation model. Theoretical modeling shows that the doping density of p- GaN layer can significantly affect the photoresponse of GaN based p-i-n UV photodetectors, especially at schottky contact. We have to make a suitable choice of the doping in the device design according to the simulation results.