As the rapid development of back-illuminated CMOS (BI-CMOS) image sensor technology in recent years, its application prospect in the field of Low-Light-Level (LLL) night vision has been widely concerned. Therefore, LLL imaging module was developed based on BICMOS, whose 3-D noise data was obtained under different illumination conditions. The test results show that, the signal-to-noise ratio (SNR) of imaging module becomes worse with the decreasing of illumination. According to the judgement of noise, the noise power of the image in low illumination is mainly Gaussian distribution. And the image processed by spatial filtering, which efficiently reducing the imaging noise and improving the imaging quality.
Based on the study of working principle and making process of 4-transistor Backside-illuminated CMOS (4T BSI-CMOS), Signal-to-noise ratio (SNR) model are established and quantitative calculating formula is derived. In addition, factors of influencing SNR are analyzed. Two methods are presented to enhance the SNR, the one is optimizing structure of 4T BSI-CMOS image sensor to strengthen the signal and the other one is correlated double sampling to decrease fixed pattern noise (FPN). These results serve as useful guidelines to enhance the SNR of 4T BSI-CMOS and improve the image quality.