The noise of photoconductive detector is so weak that the PAR 124A lock-amplifier is main test facility despite of discontinuation by long-gone manufacturer for decades. The paper uses 124A and 7124 lock-in amplifier system to test noise and response signal of several photoconductive detectors while use the SR830 internal oscillator and thermal noise of pure resistance as standard signal and noise source respectively. The results indicate that the data of two test system can fit each other except the background noise. The 124A lock-in amplifier with 116 transformer is 0.2nV/√Hz and 7124 lock-in amplifier with 5184 preamplifier is 0.8 nV/√Hz at 1kHz. The impedance of 116 transformer is small and the impedance of 5184 preamplifier is 5MΩ, so the signal of 116 transformer will decay and the 5184 preamplifier won’t in case of testing the performance of photoconductive detector with larger source resistance. Finally we suggest to use 7124 lock-in amplifier system in case of testing photoconductive detector with larger source resistance and use 124A lock-in amplifier system prior to 7124 lock-in amplifier system in case of testing photoconductive detector with small source resistance.
High-quality InAs<sub>1-x</sub>Sb<sub>x</sub> films with x=0.06 have been successfully grown on InAs (100) substrates by liquid phase epitaxy. Two methods are used to characterize the electrical properties of InAsSb film. One is to grow InAsSb epilayer on p-type InAs substrate, which, in combination with the n-type epilayer, forms a p-n junction to prevent the parallel conduction from the substrate. The other is that both the conductive InAs substrate and the dislocation layer between InAs and InAsSb are removed completely by chemical mechanical polishing method to get InAsSb film glued onto insulating sapphire substrate. The influence of conductive InAs substrate on the electrical properties of InAsSb film is eliminated effectively.
The self-assembled type-II GaSb quantum dots (QDs) were successfully grown on semi-insulting GaAs (100) substrate by the liquid phase epitaxy (LPE) technique with growth temperature ranging from 520 to 580 oC. The morphology of GaSb QDs including size, shape and density was investigated by atomic force microscopy measurement and scanning electron microscope measurement, respectively. The cap layer with scores of nanometers, which is characterized by Profile-system, is obtained for the photoluminescence measurement and device fabrication.
Space infrared detector is the core component of photoelectric conversion in the infrared system, the indicator of which, such as sensibility and reliability, limits the optimum performance of the detection system. In the reliability research of infrared detector, the operating life of the device is a very important index and also a significant subject in the engineering application. In the accelerated life test of space infrared detector, it was difficult to periodically measure blackbody response signal of infrared detector, due to equipment limitations for a long time. Accordingly, it was also hard to get abundant failure data of devices for statistical analysis. For this problem, we designed a novel multi-station testing system for accelerated life test of space infrared device, in which response signal as well as temperature can be measured in-situ and recorded for further analysis. Based on theoretical calculation and analysis of actual measured data, we studied and designed the mechanical structure of the equipment and the key component of the testing system, such as the displacement platform, illustrated the control algorithm and put up a system design proposal which meet the testing requirements well. This work technically supports the accelerated life test of space infrared device.
The paper mainly investigate the abnormal occurrence of no Photo current response at performance test of
detector after coupling of circuit and chip. At the beginning, we find that detector module is out of the way, while
preamplifier circuit and photosenstive chip operate well separately. Then we carry on various experiments such as
I-V measurement of chip, simulated magnification test of circuit, replace of high resistence chip, at various
background measurement and so on. All these experiments and theoretical calculation demonstrate that the large
background dark current resulting in the circuit's overload is the cause of detector's no Photo current response. By
means of adding optical filter and aperture slot to reduce the background radiation, consequently the reduction of
background dark current, and the detector finally works well without the circuit's overload.