Dr. Wei Li Profile

Dr. Wei Li

Senior Researcher at Tampere Univ

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 7 March 2005 Paper

Superluminescent diodes at 1.55 um based on quantum-well and quantum-dot active regions

Wei Li, Risto Ronkko, Andreas Rydefalk, Pekka Poyhonen, Markus Pessa

Proc. SPIE. 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX

KEYWORDS: Quantum wells, Continuous wave operation, Indium arsenide, Modulation, Waveguides, Gallium arsenide, Atomic force microscopy, Superluminescent diodes, Gallium

Read Abstract +

Proceedings Article | 1 September 2004 Paper

Characterization of 1550 nm Fabry-Perot laser structures for application as mode-locked pulse sources

Wei Li, Risto Ronkko, M. Peltola, A. Rydefalk, Markus Pessa, H. Scholl, S. Garidel, Kevin Williams, P. Moreno, H. Lamela, M. Cavallari

Proc. SPIE. 5452, Semiconductor Lasers and Laser Dynamics

KEYWORDS: Fabry–Perot interferometers, Quantum wells, External quantum efficiency, Waveguides, Mode locking, Semiconductor lasers, Laser damage threshold, Picosecond phenomena, Waveguide lasers, Pulsed laser operation

Read Abstract +

Proceedings Article | 22 May 2002 Paper

Group III-arsenide-nitride quantum well structures on GaAs for laser diodes emitting at 1.3 um

Tomi Jouhti, Chang Peng, Emil-Mihai Pavelescu, Wei Li, Victor-Tapio Rangel-Kuoppa, Janne Konttinen, Pekka Laukkanen, Markus Pessa

Proc. SPIE. 4651, Novel In-Plane Semiconductor Lasers

KEYWORDS: Quantum wells, Annealing, Luminescence, Crystals, Gallium arsenide, Indium, Nitrogen, Atomic force microscopy, Semiconductor lasers, Gallium

Read Abstract +

Proceedings Article | 22 May 2002 Paper

High-performance 1.32-um GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

Wei Li, Chang Peng, Tomi Jouhti, Janne Konttinen, Emil-Mihai Pavelescu, Mikko Suominen, Mihail Dumitrescu, Markus Pessa

Proc. SPIE. 4651, Novel In-Plane Semiconductor Lasers

KEYWORDS: Oxides, Quantum wells, Continuous wave operation, Luminescence, Gallium arsenide, Diffusion, Laser damage threshold, Pulsed laser operation, Molecular beam epitaxy, Temperature metrology

Read Abstract +

Proceedings Article | 21 May 2002 Paper

Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy

Wei Li, Markus Pessa, Tommy Ahlgren, James Dekker

Proc. SPIE. 4650, Photodetector Materials and Devices VII

KEYWORDS: Backscatter, Chemical species, Annealing, Luminescence, Ions, Gallium arsenide, Nitrogen, Gallium, Arsenic, Molecular beam epitaxy

Read Abstract +

Showing 5 of 6 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years