We propose an AlInGaAs MQWs photonics integration device with directional coupler for multifunction of light emission/detection in infrared range, and realize the device on an InP based wafer. Two identical AlInGaAs MQWdiodes, working as light emission/detection device independently, are fabricated by two-step etching process on one wafer and connected by a directional coupler. The photonic integration device is prepared by two dry etching for III-V materials and electron beam evaporation for metal electrode. The MQW-diode for emission loaded with positive bias voltage operates in transmit mode, and emits light in infrared range. The MQW-diode for detection loaded with negative bias voltage operates in receive mode, and absorbs infrared photons transmitted by directional coupler connecting the two MQW-diodes. The absorbed infrared photons leads to a change in internal electric voltage across the p-n junction of the MQW-diode for detection. The opto-electrical characterization including current–voltage and electroluminescence spectrum are conducted. The coupling performance between the two MQW-diodes is also experimentally characterized by analyzing the induced photocurrent of MQW-diode for detection. We perform finite element simulation by beam propagation method (BPM) to evaluate the light coupling performance for the directional coupler. An on-chip communication test is also conducted to demonstrate the potential application of photonics integration device for transmission optical signal in infrared range.