With technology node shrinking to 7nm and beyond, EUV lithography has been adopted in most of the advanced manufacture fab. This made the killer defect size become even smaller on both wafer and mask. The optical inspection can’t meet the sensitivity requirement, so e-beam inspection is widely used during wafer fabrication, and started to be used in pattern mask inspection (PMI). However, the drawback of e-beam inspection is low throughput. To achieve both good sensitivity and high throughput, we are developing multiple beam inspector(MBI) to meet industry’s need for EUV lithography. In this paper, we discussed e-beam pattern mask inspection(PMI) and wafer inspection, introduced our most advanced multiple beam technology and next generation multiple beam inspector (MBI) development. We have successfully got 9 images on primary beam module, and also images from secondary electron projection module. We also discussed related technologies, e.g. computation and fast stage technology to further improve throughput and lower COO. At last MBI new applications are discussed.
In this paper, we discuss the metrology methods and error budget that describe the edge placement error (EPE). EPE quantifies the pattern fidelity of a device structure made in a multi-patterning scheme. Here the pattern is the result of a sequence of lithography and etching steps, and consequently the contour of the final pattern contains error sources of the different process steps. EPE is computed by combining optical and ebeam metrology data. We show that high NA optical scatterometer can be used to densely measure in device CD and overlay errors. Large field e-beam system enables massive CD metrology which is used to characterize the local CD error. Local CD distribution needs to be characterized beyond 6 sigma, and requires high throughput e-beam system. We present in this paper the first images of a multi-beam e-beam inspection system. We discuss our holistic patterning optimization approach to understand and minimize the EPE of the final pattern. As a use case, we evaluated a 5-nm logic patterning process based on Self-Aligned-QuadruplePatterning (SAQP) using ArF lithography, combined with line cut exposures using EUV lithography.
In this paper, we focus on our most advanced multiple beam technology and next generation multiple beam inspector(MBI) development. We have successfully got 9 images on primary beam module, proving our design concept is correct. We also discussed related technologies, e.g. Computation and fast stage technology to further improve throughput and lower COO. At last MBI new applications are discussed.
In Electron-beam Projection Lithography (EPL), achieving the requirements for the ITRS 45 nm roadmap node will require decreasing simultaneously both the beam blur from the Coulomb interaction effects and the geometrical aberrations from their present values. Because next generation lithography tools are required to have both high resolution and throughput, the Coulomb effect becoems more of an issue. In this paper, we propose a novel concept to effectively decrease the Coulomb effect. Based on this new concept we develop an EPL electron optical system in which not only the Coulomb effect but also the geometrical aberrations are greatly reduced. We report on the properties of this new EPL optical system.
In this presentation, the image processing technology is applied to measure the dimensions in the section of hot- rolled section steel which is traveling on the rolling line. With a light sheet intersecting the workpiece, a bright section outline can appear on its outer surface. The entire image of this outline if formed by four TV cameras which image the outline in four directions respectively. The method that how to use this image to get the measured dimensions is discussed in detail. Four kinds of rolled section steel have been measured by this method, and results in the laboratory show that uncertainty is about 0.2 mm in the measurement range of 100 mm.
This paper proposes a heterodyne interferometer using a dual longitudinal mode HeNe 633 nm laser for absolute distance interferometry. It can measure the fractional fringe of the synthetic wavelength by an electrical phasemeter with high acccuracy. The measuring period is very short. The common optical path configuration in the interferometer eliminates the affection of air turbulence effectively.
In this paper, an on-line high speed measurement method for section shape of the banded workpiece moving at high speed, such as the hot rolled section steel, is proposed and realized. Some important technologies in the system designing are described.
This paper describes a new type multiwavelength HeNe laser interferometer for diameter measurement of large scale work piece. The laser can oscillate on two wavelength 3. 39l2i and 3. 3922pm simultaneously. By switching between two equal intensity state it provides a two order wavelength hierarchy pyramid from lm to 3. 39l2um. The range of this system is up to 20m and the accuracy 5jim+l. 5*lO6L. ( L is the measured distance