The last 10 years have seen the emergence of two-dimensional (2D) nanomaterials such as graphene, transition metal dichalcogenides (TMDs), and black phosphorus (BP) among the growing portfolio of layered van der Waals thin films. Graphene, the prototypical 2D material has advanced rapidly in device, circuit and system studies that has resulted in commercial large-area applications. In this work, we provide a perspective of the emerging and potential translational applications of 2D materials including semiconductors, semimetals, and insulators that comprise the basic material set for diverse nanosystems. Applications include RF transceivers, smart systems, the so-called internet of things, and neurotechnology. We will review the DC and RF electronic performance of graphene and BP thin film transistors. 2D materials at sub-um channel length have so far enabled cut-off frequencies from baseband to 100GHz suitable for low-power RF and sub-THz concepts.
Two-dimensional (2D) semiconductors with high carrier mobilities and sizeable bandgap are desirable for future high-speed and low power mechanically flexible nanoelectronics. In this work, we report encapsulated bottom-gated black phosphorus (BP) field-effect transistors (FETs) on flexible polyimide affording maximum carrier mobility of about 310cm<sup>2</sup>/V∙s and current on/off ratio exceeding 10<sup>3</sup>. Essential circuits of flexible electronic systems enabled by the device ambipolar functionality, high-mobility and current saturation are demonstrated in this work, including digital inverter, frequency doubler, and analog amplifiers featuring a voltage gain of ~8.7, which is the state-of-the-art value for flexible 2D semiconductor based amplifiers. In addition, we demonstrate the single FET based flexible BP amplitude-modulated (AM) demodulator, an active stage in radio receivers.