Dr. Wenge Yang Profile

Dr. Wenge Yang

at Entegris Inc

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 24 March 2006 Paper

ArF scanner performance improvement by using track integrated CD optimization

Jacky Huang, Shinn-Sheng Yu, Chih-Ming Ke, Timothy Wu, Yu-Hsi Wang, Tsai-Sheng Gau, Dennis Wang, Allen Li, Wenge Yang, Araki Kaoru

Proceedings Volume 6152, 615228 (2006) https://doi.org/10.1117/12.656104

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Sensors, Calibration, Error analysis, Scanners, Infrared sensors, Metrology, Wafer-level optics, Integrated optics

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Proceedings Article | 24 May 2004 Paper

90-nm lithography process characterization using ODP scatterometry technology

Chih-Ming Ke, Shinn-Sheng Yu, Yu-Hsi Wang, Yu-Jun Chou, Jeng-Horng Chen, Bih-Huey Lee, Hong-Yuan Chu, Hua-Tai Lin, Tsai-Sheng Gau, Chih-Hsiang Lin, Yao-Ching Ku, Burn Lin, Jacky Huang, J. Hsu, Victor Liu, Dave Hetzer, Lip Yap, Wenge Yang, Kaoru Araki

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536123

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers, Transmission electron microscopy, Metrology, Scatterometry, Finite element methods, Process control, Lithography, Wafer-level optics

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Proceedings Article | 2 June 2003 Paper

Application of scatterometry for CD and profile metrology in 193-nm lithography process development

Li-Jui Chen, Chih-Ming Ke, Shinn Sheng Yu, Tsai-Sheng Gau, Pei-Hung Chen, Yao Ching Ku, Burn Lin, Dan Engelhard, Dave Hetzer, Jason Yang, Kelly Barry, Lip Yap, Wenge Yang

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483692

KEYWORDS: Scatterometry, Critical dimension metrology, Metrology, Lithography, Scanning electron microscopy, Semiconducting wafers, Deep ultraviolet, Scatter measurement, Reflectometry, Photoresist materials

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Proceedings Article | 8 June 1998 Paper

Plasma etch process characterization: an application of atomic force microscopy

Wenge Yang, Bhanwar Singh

Proceedings Volume 3332, (1998) https://doi.org/10.1117/12.308745

KEYWORDS: Etching, Plasma etching, Metrology, Critical dimension metrology, Semiconducting wafers, Plasma, Atomic force microscopy, Metals, Scanning electron microscopy, Calibration

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