Dr. Wenjie Li Profile

Dr. Wenjie Li

Advisory Engineer at GLOBALFOUNDRIES Inc

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Author

Publications (15)

Proceedings Article | 23 March 2007 Paper

Paper

High-performance 193-nm photoresists based on fluorosulfonamide

Wenjie Li, Kuang-Jung Chen, Ranee Kwong, Margaret Lawson, Mahmoud Khojasteh, Irene Popova, P. Rao Varanasi, Tsutomu Shimokawa, Yoshikazu Yamaguchi, Shiro Kusumoto, Makoto Sugiura, Takanori Kawakami, Mark Slezak, Gary Dabbagh, Zhi Liu

Proceedings Volume 6519, 65190F (2007) https://doi.org/10.1117/12.712231

KEYWORDS: Polymers, Etching, Fluorine, Resistance, Lithography, Immersion lithography, 193nm lithography, Chemical species, Photoresist materials, Lithographic illumination

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Proceedings Article | 29 March 2006 Paper

Paper

New 193-nm top antireflective coatings for superior swing reduction

Wu-Song Huang, William Heath, Ranee Kwong, Wenjie Li, Kaushal Patel, Pushkara Rao Varanasi

Proceedings Volume 6153, 61530S (2006) https://doi.org/10.1117/12.656641

KEYWORDS: Polymers, Reflectivity, Fluorine, Antireflective coatings, Semiconducting wafers, Critical dimension metrology, Destructive interference, Transmittance, Refractive index, 193nm lithography

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Proceedings Article | 29 March 2006 Paper

Paper

Reactive ion etching of fluorine containing photoresist

Kaushal Patel, Victor Pham, Wenjie Li, Mahmoud Khojasteh, Pushkara Rao Varanasi

Proceedings Volume 6153, 61530Q (2006) https://doi.org/10.1117/12.656605

KEYWORDS: Etching, Polymers, Fluorine, Photoresist materials, Chemical species, Oxygen, Data modeling, Reactive ion etching, Photomasks, Photoresist developing

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Proceedings Article | 4 May 2005 Paper

Paper

Progress toward developing high performance immersion compatible materials and processes

Karen Petrillo, Kaushal Patel, Rex Chen, Wenjie Li, Ranee Kwong, Peggy Lawson, Rao Varanasi, Chris Robinson, Steven Holmes, Dario Gil, Kurt Kimmel, Mark Slezak, Gary Dabbagh, Takashi Chiba, Tsutomu Shimokawa

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.601621

KEYWORDS: Polymers, Lithography, Immersion lithography, Materials processing, Semiconducting wafers, Particles, Photoresist materials, Image processing, Photoresist processing, Scanners

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Proceedings Article | 4 May 2005 Paper

Paper

193nm single layer photoresists: defeating tradeoffs with a new class of fluoropolymers

Pushkara Varanasi, Ranee Kwong, Mahmoud Khojasteh, Kaushal Patel, Kuang-Jung Chen, Wenjie Li, M. Lawson, Robert Allen, Ratnam Sooriyakumaran, P. Brock, Linda Sundberg, Mark Slezak, Gary Dabbagh, Z. Liu, Yukio Nishimura, Takashi Chiba, Tsutomu Shimokawa

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599700

KEYWORDS: Polymers, 193nm lithography, Lithography, Etching, Photoresist materials, Fluorine, Immersion lithography, Modulation, Photomasks, Reactive ion etching

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Proceedings Article | 28 May 2004 Paper

Paper

BEOL lithography for early development at the 65-nm node

Ronald DellaGuardia, Ranee Kwong, Wenjie Li, Peggy Lawson, Martin Burkhardt, Ioana Grauer, Qiang Wu, M. Angyal, H. Hichri, Ian Melville, K. Kumar, Y. Lin, Steven Holmes, R. Varanasi, T. Spooner, D. McHerron

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.544238

KEYWORDS: Lithography, Etching, Photomasks, Semiconducting wafers, Metals, Critical dimension metrology, Silicon, Image processing, Back end of line, Finite element methods

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Proceedings Article | 28 August 2003 Paper

Paper

Current developments of a high-performance CA resist for mask-making application

Wu-Song Huang, Wei He, Wenjie Li, Wayne Moreau, Robert Lang, David Medeiros, Karen Petrillo, Arpan Mahorowala, Marie Angelopoulos, Christina Deverich, Chester Huang, Paul Rabidoux

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504049

KEYWORDS: Etching, Photomasks, Polymers, Silicon, Chromium, Semiconducting wafers, Mask making, Resistance, Lithography, Scanning electron microscopy

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The mask fabrication industry is slowly migrating to chemically amplified (CA) resists to take the advantages of their high contrast, resolution, and sensitivity. During this migration process, the industry has encountered several problems associated with CA resists such as baking homogeneity of thick mask plates on hot plates, footing on Cr masks, and storage stability of mask blanks. In addressing these issues, we have adopted a low Ea CA resist platform to overcome the bake latitude issue. The resist formulation has been reformulated to reduce the footing and a new package method has been introduced to extend the storage of the blanks. In addition, we will also discuss our studies on two major areas, such as sensitivity and etch resistance, which we think is extremely important for E-beam resists in the future. The mask industry started with 248nm DUV CA resist systems and then found out that there was a need for even higher sensitivity resist systems to address the throughput issue. In our early study, we have observed that by simply increasing photoacid generator loading in the resist formulation we were able to increase the sensitivity, but there was a significant reduction in the dose latitude. After studying the dissolution and inhibition properties of different PAGs, we have been able to optimize PAG and base loading in combination with proper choice of PAGs to achieve high sensitivity and large dose latitude. The new resist formulation exhibits a large dose latitude of 38% for 100 nm l/s images with high sensitivity of 4.4μC/cm² at 100 kV. Due to the electron scattering effect and the image collapse issues with thicker resists, thinner imaging layer is desirable. Sufficient etch selectivity is needed to compensate the insufficient resist thickness. Therefore, there is a need to develop a high Cl₂/O₂ RIE (used in Cr etch process) etch resistant resist system for mask making. We have reported earlier that a resist formulation based on blending KRS-XE with SSQ polymer has resolved 50nm l/s resist images with etch rate 20% better than conventional novolak I-line resist systems. Since then, we have investigated a few new SSQ polymers and found some lithographic improvement in this new blending systems due to better compatibility of the SSQ polymer to the KRS-XE.

Proceedings Article | 12 June 2003 Paper

Paper

Impact of thin resist processes on post-etch LER

Arpan Mahorowala, Dario Goldfarb, Karen Temple, Karen Petrillo, Dirk Pfeiffer, Katherina Babich, Marie Angelopoulos, Gregg Gallatin, Stacy Rasgon, Herbert Sawin, Scott Allen, Robert Lang, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Wenjie Li, Pushkara Varanasi, Martha Sanchez, Hiroshi Ito, Gregory Wallraff, Robert Allen

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485168

KEYWORDS: Etching, Oxides, Scanning electron microscopy, Line edge roughness, Atomic force microscopy, Polymers, Plasma, Plasma etching, Chemistry, Photoresist processing

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Proceedings Article | 12 June 2003 Paper

Paper

Rational design in cyclic olefin resists for sub-100-nm lithography

Wenjie Li, Pushkara Varanasi, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Hiroshi Ito, Hoa Truong, Robert Allen, Masafumi Yamamoto, Eiichi Kobayashi, Mark Slezak

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485100

KEYWORDS: Polymers, Etching, Lithography, Resistance, Fluorine, Surface roughness, Dry etching, Semiconducting wafers, 193nm lithography, Polymer thin films

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Proceedings Article | 11 March 2002 Paper

Paper

Extending the performance of KRS-XE for high-throughput electron-beam lithography for advanced mask making

David Medeiros, Karen Petrillo, James Bucchignano, Marie Angelopoulos, Wu-Song Huang, Wenjie Li, Wayne Moreau, Robert Lang, Ranee Kwong, Christopher Magg, Brian Ashe

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458334

KEYWORDS: Etching, Photomasks, Resistance, Mask making, Lithography, Polymers, Scanning electron microscopy, Packaging, Plasma, Electron beam lithography

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Proceedings Article | 24 August 2001 Paper

Paper

193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries

Toru Kajita, Yukio Nishimura, Masafumi Yamamoto, Hiroyuki Ishii, A. Soyano, A. Kataoka, Mark Slezak, Makoto Shimizu, Pushkara Varanasi, G. Jordahamo, Margaret Lawson, R. Chen, William Brunsvold, Wenjie Li, Robert Allen, Hiroshi Ito, Hoa Truong, Thomas Wallow

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436833

KEYWORDS: Etching, Monochromatic aberrations, Chemistry, Polymers, Lithography, Polymerization, Resistance, Imaging systems, Surface roughness, Transparency

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Proceedings Article | 24 August 2001 Paper

Paper

Postmodification as a way to improve the lithographic performance of resist materials

Wenjie Li, Pushkara Varanasi, Margaret Lawson, Timothy Hughes, George Jordhamo, Robert Allen, Hiroshi Ito

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436909

KEYWORDS: Polymers, Lithography, Etching, Resistance, Reactive ion etching, Polymerization, Silicon, Semiconducting wafers, Standards development, Transparency

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Proceedings Article | 23 June 2000 Paper

Paper

Progress toward developing high-performance 193-nm single-layer positive resist based on functionalized poly(norbornenes)

Pushkara Varanasi, George Jordhamo, Margaret Lawson, K. Rex Chen, William Brunsvold, Timothy Hughes, Robin Keller, Mahmoud Khojasteh, W. Li, Robert Allen, Hiroshi Ito, Juliann Opitz, Hoa Truong, Thomas Wallow

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388280

KEYWORDS: Polymers, Etching, Lithography, Reactive ion etching, Surface roughness, Photomasks, 193nm lithography, Phase shifts, Deep ultraviolet, Photoresist materials

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Proceedings Article | 8 October 1999 Paper

Paper

Analytical study on a MEMS microcooling system for cooling flip chips

Andrew Tay, Francis Tay, Wenjie Li

Proceedings Volume 3893, (1999) https://doi.org/10.1117/12.368420

KEYWORDS: Silicon, Aluminum, Resistance, Microelectromechanical systems, Heat flux, Convection, Fluctuations and noise, Microfluidics, Cooling systems, Computer programming

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Proceedings Article | 28 June 1999 Paper

Paper

New additional layer to realize initialization-free function for DVD-RAM disk

X.-S. Miao, Tow Chong Chong, L. Shi, P. Tan, Wenjie Li

Proceedings Volume 3864, 38642J (1999) https://doi.org/10.1117/12.997655

KEYWORDS: Crystals, Germanium antimony tellurium, Reflectivity, Antimony, Sputter deposition, Optical discs, Dielectrics, Doping, Optical storage, X-ray diffraction

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Showing 5 of 15 publications

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