Plasma-induced damage to low-k dielectric materials can be quantified by separation of the effects of charged-particle
bombardment, photon bombardment, and gas-radical flux. For ion and photon bombardment, the spatial location and
extent of the damage can be determined. Damage effects from radical flux will be shown to be small. Both SiCOH and
photo-programmable low-k (PPLK) dielectrics will be discussed.