Extreme ultraviolet (EUV) lithography, using 13.5 nm radiations, is almost ready for high volume manufacturing. EUV lithography is expected to be the main technology for manufacturing leading-edge devices and continuous improvement of lithography performance is still needed. We have developed several metal oxide containing resists and recently focused on metal organic cluster photoresists with controlled size distribution. In this paper, material properties and lithography performance of our new metal organic cluster photoresists are discussed.
Extreme ultraviolet (EUV) lithography, using 13.5 nm radiation, is a prominent candidate for next generation manufacturing. Our main effort has recently focused on metal organic cluster photoresists, including both Zr and Hf metal oxides, both relatively low EUV absorbing metals. However, integration of high EUV absorption elements is now considered to be a more promising route to further improve lithographic performance under EUV radiation. Here, we report lithography of zinc oxide-based metal organic cluster photoresists, and EUV patterning below 15 nm. The lithographic performance of this and other metal oxides is described and etch characteristics discussed.