The complexity of photomasks is rapidly increasing as semiconductor devices are scaled down and optical proximity correction (OPC) becomes commonplace. Raster scan architectures are well suited to the challenge of maintaining mask throughput despite these trends. Electron-beam techniques have the resolution to support OPC requirements into the foreseeable future. The MEBES® eXara mask pattern generator combines the resolution of a finely focused electron probe with the productivity and accuracy of Raster Graybeam patterning. Features below 100nm can be created, and OPC designs are produced with consistent fidelity. Write time is independent of resist sensitivity, allowing high-dose processes to be extended, and relaxing sensitivity constraints on advanced chemically amplified resists. The system is designed for the production of 100nm photomasks, and will support the development of 70nm masks.