A unique method has been developed for interconnecting a GaAs semiconductor device to an Application Specific Integrated Circuit (ASIC) chip. The device has 400 control points on a 25 im pitch. A silicon interconnect chip with cantilevered gold beam leads having the same packing density as the GaAs device and ASIC chip was designed to " bridge" the space between the two. Special photolithographic steps had to be developed to fabricate beams 250 pm long X 9 tm thick. The methods for fabricating the bridge chip and its final assembly will be discussed.
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