Dr. Won Jun Choi Profile

Dr. Won Jun Choi

Principal Research Scientist at Nano Convergence Devices Ctr

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Publications (18)

Proceedings Article | 13 March 2024 Presentation + Paper

InAs quantum dash lasers for 2-μm photonics

Rafael Jumar Chu, Tsimafei Laryn, Won Jun Choi, Daehwan Jung

Proceedings Volume 12905, 129050Q (2024) https://doi.org/10.1117/12.3001961

KEYWORDS: Quantum dot lasers, Short wave infrared radiation, Optoelectronic devices, Indium arsenide

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Proceedings Article | 10 October 2023 Paper

Growth of bulk 0.1 eV InAsSb on GaAs substrate with InAs-based intermediate buffer layer

Seungwan Woo, Eungbeom Yeon, Ho Won Jang, Daehwan Jung, Won Jun Choi

Proceedings Volume 12687, 1268707 (2023) https://doi.org/10.1117/12.2676674

KEYWORDS: Antimony, Indium arsenide, Gallium arsenide, Long wavelength infrared, Photoluminescence, Crystals, Atomic force microscopy, Surface roughness, Optoelectronics, Heteroepitaxy, Photodetectors, Mid infrared

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Proceedings Article | 24 January 2011 Paper

Growth and characterization of low density droplet GaAs quantum dots for single photon sources

S.-K. Ha, J. D. Song, J. Y. Lim, S. Bounouar, F. Donatini, L. S. Dang, J. P. Poizat, J. S. Kim, W. J. Choi, I. K. Han, J. I. Lee

Proceedings Volume 7945, 79452H (2011) https://doi.org/10.1117/12.871432

KEYWORDS: Gallium arsenide, Single photon, Sensors, Quantum dots, Excitons, Silicon, Scanning electron microscopy, Epitaxy, Photonic crystals, Resonators

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Proceedings Article | 4 January 2008 Paper

Thermal treatment for tuning the lasing wavelength of quantum dot laser diodes

Kwang Woong Kim, Moon Ho Park, Kyung Wuk Jung, Sung Phil Ryu, Nam Ki Cho, Ju Young Lim, Sung Jun Park, Jin Dong Song, Won Jun Choi, Jung Il Lee, Jung Ho Park

Proceedings Volume 6831, 683117 (2008) https://doi.org/10.1117/12.757124

KEYWORDS: Indium gallium arsenide, Silica, Annealing, Quantum dot lasers, Diodes, Optoelectronic devices, Quantum dots, Thermography, Metals, Thermal effects

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Proceedings Article | 6 October 2006 Paper

Lasing characteristics of 1.3-um atomic layer epitaxy quamtum dot laser diode

Kwang Woong Kim, Nam Ki Cho, Jin Dong Song, Won Jun Choi, Jung Il Lee, Jung Ho Park

Proceedings Volume 6352, 63522G (2006) https://doi.org/10.1117/12.691596

KEYWORDS: Gallium, Aluminum, Gallium arsenide, Continuous wave operation, Doping, Modulation, Cladding, Epitaxy, Semiconductor lasers, Scanning probe lithography

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Proceedings Article | 6 October 2006 Paper

Enhanced terahertz emission from InAs quantum dots on GaAs

Hongkyu Park, Jeonghoi Kim, Euna Jung, Wonjun Choi, Jungil Lee, Haewook Han

Proceedings Volume 6352, 63521Z (2006) https://doi.org/10.1117/12.691628

KEYWORDS: Terahertz radiation, Gallium arsenide, Indium arsenide, Semiconductors, Quantum dots, Ultrafast lasers, Optical pumping, Imaging spectroscopy, Beam splitters, Spectroscopy

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Proceedings Article | 7 February 2006 Paper

GaAs-based 1.3 μm quantum dot laser diode with 3-stacked InAs DWELL (dots-in-a-well) structure and Al_0.7Ga_0.3As cladding layer

Kwang Kim, Nam Cho, Sung Ryu, Jin Song, Won Choi, Jung Lee, Jung Park

Proceedings Volume 6129, 612909 (2006) https://doi.org/10.1117/12.646586

KEYWORDS: Gallium, Aluminum, Gallium arsenide, Cladding, Doping, Modulation, Indium arsenide, Coating, Scanning probe lithography, Quantum wells

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Proceedings Article | 12 September 2005 Paper

Optical properties of quantum dot infrared photodetectors with dot in an asymmetric well structure

J. Lim, J. Shin, J. Song, W. Choi, J. Lee, H. Yang, J. Choe

Proceedings Volume 5881, 58810V (2005) https://doi.org/10.1117/12.618429

KEYWORDS: Gallium arsenide, Indium arsenide, Gallium, Quantum dots, Infrared radiation, Infrared photography, Quantum well infrared photodetectors, Photodetectors, Quantum wells, Luminescence

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Proceedings Article | 12 September 2005 Paper

Modification of the optical and electrical properties of quantum dot infrared photodetector (QDIP) by thermal treatment

J. Shin, W. Choi, J. Song, J. Lee, J. Choe

Proceedings Volume 5881, 58810W (2005) https://doi.org/10.1117/12.618465

KEYWORDS: Gallium arsenide, Annealing, Thermography, Quantum dots, Indium arsenide, Gallium, Quantum well infrared photodetectors, Infrared radiation, Infrared photography, Thermal effects

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Proceedings Article | 25 May 2004 Paper

1/f noise of GaAs Schottky diodes embedded with self-assembled InAs quantum dots

Jin Dong Song, Won June Choi, Il Ki Han, Woon-Jo Cho, Jung Lee, Y. Yu, Chong-Hong Pyun, Jeong-Hye Kim, Jong-In Song, Alain Chovet

Proceedings Volume 5472, (2004) https://doi.org/10.1117/12.547358

KEYWORDS: Quantum dots, Diodes, Gallium arsenide, Indium arsenide, Electrons, Interfaces, Semiconductors, Modulation, Epitaxy, Photodetectors

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Proceedings Article | 8 December 2003 Paper

Enhancement of optical properties of self-assembled quantum dots for infrared photodetectors by thermal annealing

Sung Ho Hwang, Jae Cheol Shin, Jin Dong Song, Won Jun Choi, Yong Ju Park, Il Ki Han, Woon Jo Cho, Jung Il Lee, Haewook Han

Proceedings Volume 5209, (2003) https://doi.org/10.1117/12.506623

KEYWORDS: Annealing, Dielectrics, Optical properties, Quantum dots, Thermography, Metalorganic chemical vapor deposition, Infrared photography, Infrared radiation, Photodetectors, Quantum well infrared photodetectors

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Proceedings Article | 24 November 2003 Paper

Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots

Jin Dong Song, Yong Min Park, Jae Gu Lim, Jae Cheol Shin, Yong Ju Park, Won Jun Choi, Il-Ki Han, Woon-Jo Cho, Jung Il Lee

Proceedings Volume 5224, (2003) https://doi.org/10.1117/12.506478

KEYWORDS: Gallium, Indium gallium arsenide, Indium arsenide, Gallium arsenide, Indium, Quantum dots, Arsenic, Aluminum, Chemical species, Luminescence

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Proceedings Article | 29 August 2002 Paper

P-channel MODFET as an optoelectronic detector

Hwe-Jong Kim, Dong Myong Kim, Il Ki Han, Won Jun Choi, Jacques Zimmermann, Jung Il Lee

Proceedings Volume 4905, (2002) https://doi.org/10.1117/12.481019

KEYWORDS: Field effect transistors, Optoelectronics, Sensors, Wireless communications, Heterojunctions, Statistical analysis, Statistical modeling, Channel projecting optics

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Proceedings Article | 29 August 2002 Paper

Light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer

Il Ki Han, Du Heo, Won Jun Choi, Jung Il Lee

Proceedings Volume 4905, (2002) https://doi.org/10.1117/12.481052

KEYWORDS: Wireless communications, Heterojunctions, Semiconductor lasers

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Proceedings Article | 16 October 2001 Paper

Linearized multiple-quantum-well electro-absorption modulator by quantum well intermixing technique

Won Jun Choi, Woon Kim, Il Ki Han, Yong Ju Park, Eun Kim, Jung Il Lee, Jong Yi

Proceedings Volume 4602, (2001) https://doi.org/10.1117/12.445708

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Proceedings Article | 15 October 2001 Paper

1/f noise in semiconductor heterostructure laser diodes

Jung Il Lee, Il Ki Han, Won Jun Choi, Jean Brini, Alain Chovet

Proceedings Volume 4600, (2001) https://doi.org/10.1117/12.444683

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Proceedings Article | 27 April 2000 Paper

Significant improvement of an AlGaAs-GaAs NpnP optical thyristor with mirror layers

Doo-Gun Kim, Jung-Jun Lee, Young-Wan Choi, Seok Lee, Deokha Woo, Byung Kwon Kang, Hwe-Jong Kim, Won Jun Choi, Yoon Ho Park, Hee Taek Yi, Sun-Ho Kim

Proceedings Volume 3952, (2000) https://doi.org/10.1117/12.384403

KEYWORDS: Mirrors, Switching, Free space optics, Signal detection, Optoelectronics, Optical interconnects, Free space, Optoelectronic devices, Reflectors, Optical switching

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Proceedings Article | 1 April 1999 Paper

Multiple-wavelength lasers defined by stripe width using one-step impurity-free quantum well intermixing technique

Won Jun Choi, Erik Skogen, Jin Kim, Ryan Naone, Larry Coldren

Proceedings Volume 3628, (1999) https://doi.org/10.1117/12.344523

KEYWORDS: Quantum wells, Annealing, Semiconductor lasers, Semiconducting wafers, Photonic integrated circuits, Internal quantum efficiency, Wavelength division multiplexing, Gallium arsenide, Beryllium, Fabrication

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Showing 5 of 18 publications

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