Molecularly hybridized materials composed of polymer semiconductors (PSCs) and single-walled carbon nanotubes (SWNTs) may provide a new platform to exploit an advantageous combination of semiconductors, which yields electrical properties that are not available in a single component system. In this talk, we demonstrate high-performance ink-jet printed hybrid transistors with an electrically engineered heterostructure by using specially designed PSCs and semiconducting SWNTs (sc-SWNTs) whose system achieved a high mobility of 0.23 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>, no V<sub>on</sub> shift, a low off-current, and good bias-stability. We also revealed that binding energy between PSCs and sc-SWNT was strongly affected by side-chain length of PSCs, leading to the formation of homogeneous nanohybrid film. Eventually, understanding of electrostatic interactions in the heterostructure and experimental results suggest criteria for the design of nanohybrid heterostructures.
Acknowledgement. This work was supported by a grant (Code No. 2011-0031628) from the Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Science, ICT and Future Planning, Korea. The authors acknowledge Prof. Kilwon Cho for collaboration on the analysis of x-ray diffraction.