Mr. Wook Chang Profile

Wook Chang

at Hanyang Univ

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Author

Publications (4)

Proceedings Article | 14 May 2007 Paper

Process latitude dependency on local photomask haze defect in 70-nm binary intensity mask

Hye-Keun Oh, Young-Min Kang, Sung-Jin Kim, Jai-Soon Kim, Jin-Back Park, Wook Chang, Seung-Wook Park, Han-Koo Cho

Proceedings Volume 6607, 660720 (2007) https://doi.org/10.1117/12.728983

KEYWORDS: Air contamination, Photomasks, Phase shifts, Electroluminescence, Binary data, Reticles, Semiconducting wafers, Critical dimension metrology, Semiconductors, Crystals

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Proceedings Article | 22 March 2007 Paper

32-nm pattern collapse modeling with radial distance and rinse speed

Hye-Keun Oh, Wook Chang, Sung-Hyuk Kim, Seoung-Wook Park, Suk-Joo Lee, Jong-Sun Kim

Proceedings Volume 6519, 65193Y (2007) https://doi.org/10.1117/12.712220

KEYWORDS: Liquids, Semiconducting wafers, Mathematical modeling, Capillaries, Lithography, Electronics, Chemically amplified resists, Optical lithography, Applied physics, Semiconductors

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Proceedings Article | 21 March 2007 Paper

Characteristics and prevention of pattern collapse in EUV lithography

Wook Chang, Chang-Moon Lim, Hye-Keun Oh, Eun-Jin Kim, Jai-Soon Kim, Seung-Wook Park, Young-Min Kang, Ki-Tak Won

Proceedings Volume 6517, 65172S (2007) https://doi.org/10.1117/12.712469

KEYWORDS: Extreme ultraviolet, Deep ultraviolet, Extreme ultraviolet lithography, Lithography, Liquids, Semiconductors, Ultraviolet radiation, Adhesives, Optical lithography, Autoregressive models

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Proceedings Article | 23 March 2006 Paper

EUV lithography simulation for the 32nm node

Jong Sun Kim, Hye-Keun Oh, Wook Chang, Eun Jin Kim, Jin Back Park, Sung Jin Kim

Proceedings Volume 6151, 61510V (2006) https://doi.org/10.1117/12.656335

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Binary data, Extreme ultraviolet, Image processing, Chromium, Optical lithography, Germanium, Near field, Refractive index

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Extreme Ultraviolet Lithography (EUVL) is one of the patterning technologies proposed for the next generation lithography (NGL) which makes pattern less than 50 nm critical dimension (CD). And EUVL uses a very short exposure wavelength of 13.4 nm. So it has many characteristic in common with optical lithography, but EUVL are different from the conventional mask applied to the projection optical lithography. Specially, industry experts generally agree that the biggest challenges and risks for the next generation of lithography systems involve the mask. In EUVL, a mask is produced by applying multilayers of molybdenum and silicon to a flat substrate. The circuit pattern is produced by applying a final EUV-absorbing metal layer and then etching away the metal to form the image of the circuit. Also, the light shining with 6 degrees oblique to mask can not get target CD easily because the shadow effect is influenced on pattern. Therefore we must understand this kind of effect before doing real process. We tried to change the structure of the mask in order to decrease this effect and to have enough process latitude for the 32 nm node. EUV mask is affected by the thickness and kind of absorber and buffer material. First, we changed the absorber material such as Cr, TaN and Ge etc. without changing the buffer material. Second, we changed the thickness of the absorber materials. We tried to minimize the shadow effect by adjusting the side wall angle of the absorber layer parallel to the oblique incidence. Additionally we considered different shapes and depth of the etched multilayer binary mask and the refilled multilayer binary mask such as the inclined side wall of the etched multilayer. In this paper, we will describe the optimized EUV mask structure for 32 nm node by studying not only the aerial image, but also the resist profile. Solid-EUV simulator of Sigma-C is used to calculate the aerial image, resist pattern profile, and the process latitude with the optimized process parameters.

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