Today, spatial light modulators (SLMs) based on individually addressable micro-mirrors play an important role for use
in DUV lithography and adaptive optics. Especially the mirror planarity and stability are important issues for these
applications. Mono-crystalline silicon as mirror material offers a great possibility to combine the perfect surface with the
good mechanical properties of the crystalline material. Nevertheless, the challenge is the integration of mono-crystalline
silicon in a CMOS process with low temperature budget (below 450°C) and restricted material options. Thus, standard
processes like epitaxial growth or re-crystallization of poly-silicon cannot be used. We will present a CMOS-compatible
approach, using adhesive wafer transfer bonding with Benzocyclobutene (BCB) of a 300nm thin silicon membrane,
located on a SOI-donor wafer. After the bond process, the SOI-donor wafer is grinded and spin etched to remove the
handle silicon and the buried oxide layer, which results in a transfer of the mono-crystalline silicon membrane to the
CMOS wafer. This technology is fully compatible for integration in a CMOS process, in order to fabricate SLMs,
consisting of one million individually addressable mono-crystalline silicon micro-mirrors. The mirrors, presented here,
have a size of 16×16 μm2. Deflection is achieved by applying a voltage between the mirrors and the underlying
electrodes of the CMOS electronics. In this paper, we will present the fabrication process as well as first investigations of
the mirror properties.
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