We report recent developments in Bragg soliton dynamics on an ultra-silicon-rich nitride chip, including gap soliton-based tunable slow light and pure quartic Bragg solitons.
Silicon-rich nitride (SRN) devices provide higher optical nonlinearity than stoichiometric silicon nitride. Their growth using CMOS-compatible chemical vapor deposition allows their composition to be tunable. Conventional SRN typically utilizes silane gas which introduces absorption overtones at the 1.55μm wavelength region. As is also the case with stoichiometric silicon nitride, high temperature annealing can be used to reduce Si-H based absorption. An alternate approach towards eliminating Si-H absorption is by replacing silane gas with deuterated silane. The substitution of Si-H with Si-D induces a blue shift in the wavenumber of the bond absorption, thus removing the absorption overtone at the telecommunications region. Consequently, deuterated SRN provides lower material losses compared to non-deuterated SRN, while providing a design degree of freedom for tailoring its linear and nonlinear refractive indices. We present the material properties for deuterated SRN and its application towards linear and nonlinear photonic devices. We demonstrate improved device losses when deuterated SRN is used compared to non-deuterated SRN. We further quantify the optical properties and nonlinearity of grown films and demonstrate low power parametric wavelength conversion in deuterated SRN ring resonators.
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