Dr. Xavier Rottenberg Profile

Dr. Xavier Rottenberg

Research Engineer at IMEC

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Publications (10)

PROCEEDINGS ARTICLE | March 15, 2018

Integrated metasurface photonics for miniature flow cytometry (Conference Presentation)

Proc. SPIE. 10506, Nanoscale Imaging, Sensing, and Actuation for Biomedical Applications XV

KEYWORDS: Optical components, Visible radiation, Waveguides, Silicon, Life sciences, Flow cytometry, Photonics, Integrated optics, Integrated photonics, Diffraction gratings

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PROCEEDINGS ARTICLE | February 22, 2018

Coupled multiphysics circuital modelling of micro-opto-mechanical pressure sensor systems

Proc. SPIE. 10545, MOEMS and Miniaturized Systems XVII

KEYWORDS: Modeling, Optical amplifiers, Waveguides, Sensors, Computer simulations, Optical simulations, Integrated optics, Acoustics, Electronic circuits, Phase shifts

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PROCEEDINGS ARTICLE | July 27, 2016

Density controlled nanophotonic waveguide gratings for efficient on-chip out-coupling in the near field (Conference Presentation)

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Optical components, Holography, Waveguides, Polarization, Near field, Nanophotonics, Algorithm development, Integrated photonics, Near field optics, Diffraction gratings

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Waveguide optics takes up a prominent role in the progressing miniaturization of optical devices. Chip integrated photonic waveguides especially allow for complex routing schemes of light across a chip. In/out-coupling diffraction gratings form an essential tool in waveguide systems, as they facilitate the interaction between the waveguide system and the near or far-field.[1,2] Ideally, these gratings would couple out all light in the waveguide into a beam with a predefined polarization and, phase and intensity profile. As such they should be able to produce any functional beam that is typically prepared by free space optics. Yet, in practice there is typically a design trade-off between beam quality and out-coupling efficiency.[2] Light in the waveguide has to travel laterally through the grating to be coupled out. The light therefore decays exponentially over the grating, causing much more light to be coupled out at the start of the grating than at the end. This asymmetry results in a warped out-coupling intensity that heavily influences the light beam’s intensity profile. Especially when the grating is addressing points in the near field, as is the case for focusing waveguide grating couplers, this effect can be highly disruptive.

In this work we present a grating constructed from a field of sub-wavelength scatterers, rather than full grating lines. By tuning the position and the density of the scatterers, the phase and the intensity of the out-coupled light can be set precisely over large grating areas. An iterative design algorithm is developed that carefully tunes the density so as to control the light intensity in the waveguide and the amount of out-coupled light. Using FDTD simulations we show that these gratings can efficiently couple out light into a nearly diffraction limited spot with an even angular intensity. We verify this experimentally by fabricating these gratings in the SiN/SiO2 system using e-beam lithography. In addition, we also show that these gratings can couple out more complex holographic patterns.

These density controlled out-coupling gratings let us efficiently address the near-field on optical chips, making them ideal waveguide components for on-chip optical trapping, holographic imaging or fluorescent excitation.[3]

PROCEEDINGS ARTICLE | May 13, 2016

On-chip fluorescence excitation and collection by focusing grating couplers

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Microscopes, Optical design, Visible radiation, Microfluidics, Finite-difference time-domain method, Waveguides, Etching, Luminescence, Silicon, Fluorescence spectroscopy, Photonics, Integrated optics, Optical fiber cables, Silicon photonics, Diffraction gratings

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PROCEEDINGS ARTICLE | March 3, 2016

Benchmarking time-of-flight based depth measurement techniques

Proc. SPIE. 9751, Smart Photonic and Optoelectronic Integrated Circuits XVIII

KEYWORDS: Light sources, Continuous wave operation, Real time imaging, Modulation, LIDAR, Sensors, Single photon, Reflectivity, Demodulation, Image sensors, Time of flight cameras, Spatial resolution, Single photon detectors, Signal detection, Performance modeling, Systems modeling, Ranging, Time of flight imaging, Miniature imaging systems, Time of flight range image sensors

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PROCEEDINGS ARTICLE | March 2, 2015

Microscope-on-chip: combining lens-free microscopy with integrated photonics

Proc. SPIE. 9328, Imaging, Manipulation, and Analysis of Biomolecules, Cells, and Tissues XIII

KEYWORDS: Microscopes, Light sources, Waveguides, Imaging systems, Microscopy, Image resolution, Image sensors, Photonics, Phased arrays, Prototyping

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PROCEEDINGS ARTICLE | May 1, 2014

Characterization of PECVD silicon nitride photonic components at 532 and 900 nm wavelength

Proc. SPIE. 9133, Silicon Photonics and Photonic Integrated Circuits IV

KEYWORDS: Oxides, Electron beam lithography, Resonators, Waveguides, Cladding, Silicon, Wave propagation, Plasma enhanced chemical vapor deposition, Silicon photonics, Semiconducting wafers

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PROCEEDINGS ARTICLE | May 1, 2014

Optical power distributions through fractal routing

Proc. SPIE. 9133, Silicon Photonics and Photonic Integrated Circuits IV

KEYWORDS: Waveguides, Sensors, Image processing, Fractal analysis, Integrated optics, Antennas, Plasma enhanced chemical vapor deposition, Brain-machine interfaces, Tolerancing, Photonic microstructures

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PROCEEDINGS ARTICLE | May 1, 2014

Large-scale characterization of silicon nitride-based evanescent couplers at 532nm wavelength

Proc. SPIE. 9133, Silicon Photonics and Photonic Integrated Circuits IV

KEYWORDS: Waveguides, Silicon, 3D modeling, Wave propagation, Photonics, Plasma enhanced chemical vapor deposition, Photonic integrated circuits, Silicon photonics, Reactive ion etching, Standards development

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Recently, the photonics community has a renewed attention for silicon nitride.^1-3 When deposited at temperatures below 650K with plasma-enhanced chemical vapor deposition (PECVD),⁴ it enables photonic circuits fabricated on-top of standard complementary metaloxidesemiconductor (CMOS) electronics. Silicon nitride is moreover transparent to wavelengths that are visible to the human eye and detectable with available silicon detectors, thus offering a photonics platform for a range of applications that is not accessible with the popular silicon-on-insulator platform. However, first-time-right design of large-scale circuits for demanding specifications requires reliable models of the basic photonic building blocks, like evanescent couplers (Figure 1), components that couple power between multiple waveguides. While these models typically exist for the silicon-on-insulator platform, they still lack maturity for the emerging silicon nitride platform. Therefore, we meticulously studied silicon nitride-based evanescent couplers fabricated in our 200mm-wafer facility. We produced the structures in a silicon nitride film deposited with low-temperature PECVD, and patterned it using optical lithography at a wavelength of 193nm and reactive ion etching. We measured the performance of as much as 250 different designs at 532nm wavelength, a central wavelength in the visible range for which laser sources are widespread. For each design, we measured the progressive transmission of up-to 10 cascaded identical couplers (Figure 2(a)), yielding very accurate figures for the coupling factor (Figure 2(b)). This paper presents the trends extracted from this vast data set (Figure 3), and elaborates on the impact of the couplers bend radius and gap on its coupling factors (Figure 4 and Figure 5). We think that the large- scale characterization of evanescent couplers presented in this paper, in excellent agreement with the simulated performance of the devices, forms the basis for a component library that enables accurate design of silicon nitride-based photonic circuitry.

PROCEEDINGS ARTICLE | January 22, 2005

Compact and high-accuracy RF MEMS capacitive series devices

Proc. SPIE. 5717, MEMS/MOEMS Components and Their Applications II

KEYWORDS: Microelectromechanical systems, Switches, Capacitors, Metals, Dielectrics, Capacitance, Bridges, Aluminum, Optical simulations, Semiconducting wafers

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