Photocurrent of GaAs photocathode activated with Cs and O was tested by auto-activation monitor, the fitting curves of photocurrent showed that the photocurrent of the photocathode after the first activation declines exponentially, and then declines linearly with very small slope |k1|; the photocurrent after the second activation rises exponentially, and then declines linearly with a slope|k2| which is a bit larger than |k1|.Based on the mechanism difference between twice annealing of the photocathode, the degeneration behavior of the photocathode was analyzed by three-dipoles model and XPS test after the first activation and succedent thermal cleaning. It is indicated that Cs2O dipoles on the surface are saturated after the photocathode was activated for the first time, the remained Cs and Cs2O in the ultra-high vacuum chamber which deposited on the photocathode surface will prevent the emission of photoelectrons. The photocathode surface with Cs and O reconstructed when it was annealing for the second time, a lot of Cs2O dipoles changed into more stable GaAs-O-Cs dipoles, and this phenomenon would happened immediately as soon as the photocathode was activating for the second time. After the residual Cs and Cs2O dipoles depleted, the neutral gas CO2, H2O, O2, damaging the surface dipoles layer, are the main factors resulted in the decline of photocurrent. Due to the instable Cs2O dipoles on the surface of photocathode have greater chances of converting into stable GaAs-O-Cs dipoles when photocathode was activated for the first time, the photocurrent declines more slowly compared with the second activation. The discussion for the phenomenon is of great significance for exploring the photoemission mechanism of Ⅲ-Ⅴ semiconductors.
The gallium arsenide (GaAs) photocathode was generally cleaned by radiant heating, direct heating, ion bombardment annealing, and so on. In this paper, the radiant heating method, namely thermal cleaning method, was adopted for GaAs photocathode surface purification. Using this method could obtain an atomic clean surface, ensure the integrity of the GaAs surface lattice, and guarantee the uniformity of surface cleaning effect at the same time. But because the accurate measurement of the GaAs photocathode surface temperature in the vacuum system was very difficult, the residual gas analyzer (RGA) was used in this experiment to monitor the residual gas composition in ultrahigh vacuum during the thermal cleaning process and determine the thermal cleaning temperature by the partial pressure curves of As and Ga. It was found that the first peaks of As and Ga elements both appeared after heating about one hour, accompanied with H2O, N2/CO, CO2 and other common gas. According to partial pressure curves of H2O, N2/CO, CO2 and the heating time, it could be judged that the temperature at that time was not high, which should be under 150°C.After thermal cleaning experiment of three GaAs photocathodes, it was found that the peak value of As partial pressure at low temperature was generally within 10-11mbar~10-10mbar, and the peak value was at 10-10mbar at high temperature. Sometimes it was appeared that the peak value of As partial pressure at low temperature was even higher than the peak value at high temperature. The As volatilization phenomenon occurred at low temperature indicated that the elemental As exist on the GaAs photocathode surface or near surface after the chemical etching process, and the As could volatilize from GaAs photocathode at low temperature in the beginning of thermal cleaning. This research has guiding significance for further understanding the thermal cleaning mechanism of GaAs photocathode and improving the thermal cleaning technology.
In order to improve the electronic gain and luminance gain of low-light-level image intensifiers, microchannel plates(MCP) are adopted as the electron multiplier mechanism. According to the relevant experimental analysis, the resistance between channels is a limited value. Due to there are resistive coupling between any two adjacent channel of MCP, the electron transmission and the electron multiplication in a certain channel will be interfered by its adjacent channels, This phenomenon would affect the quality of image transmission and field of view of image intensifier. In low-light condition, the input current of MCP is small, the current gain of each channel is same, MCP has the area of linear current amplification and distortion-free image transmission. But when input current is large and close to saturation, lower current in channels has more current gain, leading to the contrast change of the image. This paper analyzes the transmission properties of electrons in the channels. It is proved that there is an electrical relationship between adjacent channels,throuht the circuit equations with relevant circuit parameters such as the resistance of secondary electron emission layer, resistance of resistive layer, the resistance between two adjacent channels, and so on. The analysis method and research results provide technical guidance for the improvement of electronic gain, luminance uniformity and preparation process of MCP.