There are currently lots of research activities concerning explosive hazards detection, and stand-off detection of explosives is in main focus. The reason for this interest is the occurrence of terrorist attacks on the civilian society involving Improvised Explosives Devices (IED). Laser-based spectroscopies are the only currently viable techniques that can be utilized to detect trace amounts of explosives at stand-off distances. In particular, Raman Spectroscopy (RS) has been shown to be effective for stand-off detection and has the ability to both detect and identify explosive materials. Raman spectroscopy is virtually instantaneous, non-destructive in nature and provides high selectivity. The traditional Raman spectrometer utilizes continuous lasers and CCDs to detection the scattering signal, which greatly limits the application of Raman spectroscopy in the stand-off detection of explosive hazards due to the weak signal, strong background fluorescence, ambient light interference, and long analysis time. Time-gated Raman spectroscopies are based on ultrafast pulsed lasers and time-resolved single-photon detection techniques. Through the time-gated method, the Raman signal intensity can be greatly improved, and the influence of fluorescence and environmental light can be effectively suppressed. In this work, the time-gated Raman system utilizing frequency-doubled Nd:YAG lasers at 532 nm excitation was developed. The Cassegrain telescope was coupled to the Raman spectrometer using a fiber optics cable, and notch filter was used to reject Rayleigh scattering light. The Raman scattered light was collected by a telescope and then transferred via fiber optic to spectrometer and finally directed into Intensified CMOS (ICMOS) detector. The applications of time-gated Raman spectroscopy in stand-off detection of hazardous explosives have been performed. The Raman spectra of DNT, TNT, RDX and NaNO3 at a stand-off distance of 50 m have been identified with a detection limit of 1 mg/cm2.
Black silicon, which is characterized as numerous nanospikes induced on bulk silicon, has recently attracted great attention due to its fascinating photoelectric property. Compared with the traditional silicon-based photoelectric sensor, photoelectric sensors based on the black silicon doped with supersaturated chalcogens have shown both excellent photoelectric corresponding efficiency in the visible range and considerable optical absorption efficiency in the near infrared band due to the impurity energy-level introduced by the chalcogens element supersaturated doping. Nonetheless, the differences of surface morphology greatly affect the photoelectric efficiency of black silicon photoelectric sensors, which is quite difficult to control in practice. As one of the mainstream methods in black silicon fabrication, femtosecond laser etching exhibits the ability in manipulate different dimensionality and configurations and provide a clear and flexible research platform. Black silicon can be etched on traditional silicon-based photoelectric sensor with different size of surface morphology according to the size of surface thickness. In this work, by varying the etching energy density of the femtosecond laser, three kinds of black silicon samples with different surface morphology were obtained. At the same time, the surface morphology, size, visible-infrared absorptivity and photoelectric conversion efficiency of black silicon were characterized by scanning electron microscope, spectrophotometer and confocal Raman spectroscopy, etc. We got three sample characterization data, the minimum morphology depth of black silicon can be controlled at 2μm, the maximum visible light absorption efficiency can reach 90%, and the near-infrared absorption efficiency can reach 60% before annealing. Naturally, the photoelectric conversion efficiency has been proven to be significantly improved. Based on the observation of experimental results, it is an important step to understand the photoelectric characteristic of black silicon with different morphologies, which is the application of black silicon in different fields.
With the increase of output power, more heat generation and higher operation current have become important issues, which affect the electrical-optical performance and reliability of high power semiconductor lasers. For the past several years, high power semiconductor laser chips utilizing double or triple quantum wells have been developed to achieve higher output power. However, the operation current of diode laser chips with double or triple quantum wells is much higher than that with single quantum well. Diode laser chips with double or triple quantum wells could only operate at a much lower duty cycle. In this paper, a compact quasi-continuous wave (QCW) high power semiconductor laser array based on dual-chip integration techniques has been developed. For this packaging structure, two diode laser bars were welded above and below a micro-channel heat sink, without significant increase in volume. By means of this integration method, the output power of the semiconductor laser could reach kilowatt-level at a lower operation current. The thermal behavior of the semiconductor laser array with different operation parameters was carried out using finite element method. The structure parameters of semiconductor laser array based on dual-chip integration were optimized and characterized. The output power is 1485 W operated at a current of 700 A and the maximum electro-optical efficiency is 75%, which is the record-high level for a high power semiconductor laser array.
Improvised explosive devices (IED) and homemade explosives (HMEs) have become the preferred choice for terrorists and insurgents. It’s a challenge to develop the techniques to detect explosive hazards at standoff distances. In this paper, a standoff UV Raman spectrum detection system for explosive detection was developed, which can realize 2-10m Raman spectrum detection of solid, solution and trace potassium nitrate samples. The relationship between Raman signal intensity (RSI) and pulse energy, detection distance and sample concentration was studied. The experimental results show that the RSI is approximately proportional to the pluse energy and contains nonlinear terms. It has an inverse square relationship with the detection distance and a linear relationship with the sample concentration. The concentration of solution and trace potassium nitrate samples of were successfully predicted at 2m distance, and the root mean square error of prediction (RMSEP) was 11.7 and 6.1, respectively.A simple and effective method for preparing trace potassium nitrate is presented.
The development decoding algorithms of two-dimensional cross strip anodes image readouts for applications in UV astronomy are described. We present results with Monte Carlo simulation by GEANT4 toolkit, the results show that when the cross strip anode period is 0.5mm and the electrode width is 0.4mm, the spatial resolution accuracy is sufficient to reach better than 5 μm, the temporal resolution accuracy of the event detection can be as low as 100 ps. The influences of the cross strip detector parameters, such as the anode period, the width of anode fingers (electrode), the width of the charge footprint at the anode (determined by the distance and the field between the MCP and the anode), the gain of the MCP and equivalent noise charge (ENC) are also discussed. The development decoding algorithms and simulation results can be useful for the designing and performance improvement of future photon counting imaging detectors for UV Astronomy.
This paper describes the preliminary design and performances of a new developed photon counting imaging detector for
Chinese ChangE-2 EUV explorer mission. The detector consists of microchannel plate (MCP) stacks and wedge and
strip anode and corresponding data read out electronics. The experimental results shows that the new developed detector
has a spatial resolution of about 75μm, image distortions are small and dark noise count rate less than 0.4 counts cm-2s-1.
The pulse height distribution vs MCP operating voltages and the flat field performances are also discussed.
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