A direct diode-pumped all-fiber-integrated fiber laser based on backward pumping master oscillator power amplifier configuration at 1080 nm, producing maximum output power of 4.115 kW based on 25/400 μm fiber with corresponding linear fitting optical to optical efficiency of 78.39% was demonstrated. The suppression ratio of stimulated Raman scattering is better than 35dB and it can be further optimized by decreasing the seed input power. Near diffractionlimited beam quality (M<sup>2</sup> are 1.7and 1.6 in the x and y directions based on 4-sigma method) is also achieved at the maximum output power. To the best of our knowledge, this is the first report for 4 kW near-diffraction-limited fiber lasers based on 25/400 μm fiber directly pumped by laser diodes.
In this manuscript, a 3.53kW average output power all-fiber laser system at 1064nm with 3dB linewidth as narrow as 0.16nm and near single-mode beam quality (M<sup>2</sup> ≈1.7) is demonstrated. There is no obvious stimulated Brillouin scattering, stimulated Raman scattering or amplified spontaneous emission observed. To the best of our knowledge, this is the highest output power of all-fiber laser system with narrow-linewidth and near single-mode beam quality ever reported.
The laser induced micro/ nano-meter size surface structures are fabricated by multi linear polarized femtosecond laser pulses (pulse duration τ=35 fs, wavelength λ=800 nm) irradiation at room temperature(25 ℃ ) and 400 ℃. The structures fabricated at these two temperatures show distinct temperature dependence. The grooves, which are parallel to the polarization of the laser light, can be clearly observed at almost all the structured area formed at 400 ℃ while laser induced period structures(ripples) are the most pronounced surface structure in the crater formed at room temperature. The crystallinity of these surface structures are investigated by using Raman spectroscopy. The Raman spectrum shows that all the structured area formed at 400 ℃ is crystalline(or poly-crystalline) while amorphous silicon can be observed within the structures formed at room temperature (25 ℃). These results indicate that temperature is an important parameter to be tuned to tailor the micro/nano-structure fabrication.