Avalanche Photodiodes (APDs) are key components in modern lightwave communications systems. When compared to p-i-n diodes, APDs provide internal gain via impact ionization which leads to higher sensitivity. In addition, with proper device design, high gain bandwidth products can also be achieved. In this paper, we describe our work in making high speed, low noise APDs - operating at 1300 - using GaAs based multiplication regions. Our results to date have lead to a resonant cavity enhanced (RCE) APD, operating at 1310 nm, with an external quantum efficiency of 36% and an effective k factor of 0.1.
Charge balance in the depletion region of a photodiode can be used to reduce the space charge effect. A partially depleted absorber (PDA) InGaAs/InP photodetecter with space charge balance and transit time balance has been demonstrated. A 1dB large signal compression current of 24mA was achieved at 48GHz for an 8μm × 8μm photodiode. A 100μm-diameter photodiode achieved a maximum saturation current of 199mA at 1GHz.
This paper surveys recent work in several photodetector areas including high-speed, low-noise avalanche photodiodes, high-power photodiodes, solar-blind ultra-violet PIN photodiodes, and quantum dot infrared photodetectors (QDIPs).
This paper surveys recent work in several photodetector areas including high-speed, low-noise avalanche photodiodes, solar-blind ultra-violet PIN photodiodes, and quantum dot infrared photodetectors (QDIPs).