In this paper, we report the design and fabrication of an uncooled infrared (IR) focal plane array (FPA) on quartz
substrate and the wafer-level vacuum packaging for the IR FPA in view of an optical readout method. This FPA is
composed of bi-material cantilever array which fabricated by the Micro-Electro Mechanical System (MEMS) technology,
and the wafer-level packaging of the IR FPA is realized based on AuSn solder bonding technique. The interface of
soldering is observed by scan electron microscope (SEM), which indicates that bonding interface is smooth and with no
bubbles. The air leakage rate of packaged FPA is measured to be 1.3×10-9 atm·cc/s.
Proc. SPIE. 8202, 2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology
Thin metallic films have several potential applications in MEMS field, and one of them is used as infrared absorber. In
this paper, we first build a model of metallic infrared absorption and then discuss the transmission characteristics of
infrared through metal and dielectric film. For a thin film material, the maximum absorption will occur when its sheet
resistance equals to the impedance of free space. In order to verify the absorption property, tungsten (W) nanofilms with
different thicknesses have been deposited and their characteristics of infrared absorption were experimentally studied.
The infrared absorbance of W nanofilms increased as the thickness of the films increased; more than 50% IR radiation
could be absorbed by W nanofilms at the wavelength of 8-12 μm.