In this work, authors report for the first time on CMOS-compatible integrated micro-ring resonators with Bragg gratings coupled at both bus ends using a high quality Si3N4 film deposited by the liquid source CVD (LSCVD) method at ultra-low temperature of 150 ºC. Generally, the Si3N4 films deposited by either LPCVD or PECVD have demonstrated high tensile stress which prevents a thicker film deposition greater than 250 nm-thick with low loss state. Considering above, LSCVD is developed to fabricate the high quality Si3N4 films of several micrometers thickness without the limitation of cracking using the liquid SiN-X source at only 150 ºC, which guaranteed Kerr-based nonlinearity while featured high thermal compatibility with existing front-end electronic devices and silicon photonics especially those involving flexible/organic substrate. Furthermore, LSCVD deposition without needing SiH4 and NH3 chemistry also avoided the dangling Si-H and N-H bonds, which usually occur to PECVD and LPCVD and required extra 1200 ºC post-annealing to overcome such intrinsic absorption loss in C-band. We demonstrated high Q-factor ring resonators in this Si3N4 films, showing Q-value of over 1.3 × 10^5. A 3-dB bandwidth of around 70 nm for grating coupler was also achieved with 1550 nm central wavelength, while the coupling efficiency from fiber to grating is less than 4 dB. In this case, the measured spectral bandwidth can cover most of operating frequency of C-band and L-band. The LSCVD deposited Si3N4 is therefore a promising CMOS-compatible integration platform for nonlinear functional devices and circuits at telecommunication wavelengths.