Mr. Xiaoyang Li Profile

Xiaoyang Li

at ASML

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 28 April 2023 Presentation + Paper

Physical dose modeling and throughput optimization in EUV computational lithography

Austin Peng, Christopher Kaplan, Jeff Lu, Michael Crouse, Zuanyi Li, Xiaobo Xie, David Rio, Achim Woessner, Alexander Tan, Cuiping Zhang, Xiaoyang Li, Dezheng Sun, Stephen Hsu, Rafael Howell, Joerg Zimmermann

Proceedings Volume 12494, 124940C (2023) https://doi.org/10.1117/12.2657454

KEYWORDS: Source mask optimization, Computational lithography, Nanoimprint lithography, Extreme ultraviolet, Semiconducting wafers, Scanners, Modeling, Reticles, Artificial intelligence, Light sources and illumination

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Proceedings Article | 28 April 2023 Presentation + Paper

A holistic approach to model-based stochastic-aware computational lithography

ChangAn Wang, Yongfa Fan, Mu Feng, Qian Xie, Jazer Wang, Chris Kaplan, Michael Crouse, Xiaoyang Li, Stephen Hsu, Peigen Cao, Yi-Hsing Peng, Stephen Chang, Jun Ye, Youping Zhang, Bin Cheng, Ken Yang, Leiwu Zheng, Jen-Shiang Wang, Austin Peng, Li-Hao Yeh, Cuiping Zhang, Rafael Howell, Alexander Tan, Yiqiong Zhao, Jun Lang, Xiaolong Zhang

Proceedings Volume 12494, 124940B (2023) https://doi.org/10.1117/12.2658508

KEYWORDS: Stochastic processes, Data modeling, Optical proximity correction, Line width roughness, Source mask optimization, Computational lithography, Semiconducting wafers, Modeling, Performance modeling, Photons

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Proceedings Article | 16 September 2022 Paper

Mask and illumination optimization for low-k1 EUV lithography

Dong-Seok Nam, Jung-Hoon Ser, Nakgeuon Seong, Xiaoyang Li, Stephen Hsu, Anthony Yen

Proceedings Volume 12325, 1232502 (2022) https://doi.org/10.1117/12.2651194

KEYWORDS: Photomasks, Critical dimension metrology, Tolerancing, Extreme ultraviolet, Extreme ultraviolet lithography, Source mask optimization, Stochastic processes, Semiconducting wafers, Lithographic illumination

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Proceedings Article | 26 May 2022 Presentation + Paper

A novel solution on KrF pixel layer with thick photo resist (PR) by single exposure multi-focal imaging (SE MFI) technique

Zhenhai Yao, Lequn Jin, Yuhua Li, Maoqun Jiang, Fabin Huang, Min Fang, Xichen Sheng, Rongkuo Zhao, Michael Crouse, Chris Kaplan, Dongqing Zhang, Dongxiang Shi, Zhonghua Xu, Chaoqun Guo, Pieter Scheijgrond, Xiaoyang Jason Li, Stephen Hsu, Will Conley, Zhen Tang

Proceedings Volume 12051, 1205109 (2022) https://doi.org/10.1117/12.2616830

KEYWORDS: Semiconducting wafers, Chromatic aberrations, Data modeling, Calibration, Source mask optimization, Photomasks, SRAF, Copper indium disulfide, Optical lithography, Image processing

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Advancing technology nodes in CMOS Image Sensors (CIS) continues to drive a shrinking process to acquire higher resolution and low power consumption as well as more cost-effective production. With the sensor pixel size scaling down, a thicker photoresist (with aspect ratios greater than 10:1) is introduced to block high-energy implants with extremely localized implant profiles. Then double exposures/double focus (DE/DF) is applied to make sure the resist profile and process window is comparable or better. However, this process is a big challenge at high volume manufacturing (HVM) phase because of throughput loss. To recover it due to DE/DF, we invented SE MFI which uses two wavelengths (“colors”) generated by the KrF excimer laser to solve the problem. Due to the chromatic aberrations in the lens, the focal plane shift of different wavelength produces nearly the same result as DE/DF. However, the use of two-wavelengths brings some challenges. The first is the loss of image contrast and the second is the impact of chromatic aberrations across the slit which results in image shift and image asymmetry. In this work, we demonstrated that the use of ASML’s Tachyon KrF MFI source mask optimization (SMO) that can match the MFI SE process to DE/DF process of record (POR). We first used Tachyon Focus-Exposure Modeling plus (FEM+) to calibrate a DE resist model by using DE POR wafer data. Then we converted the DE model to a SE MFI model. At the end, we use the Tachyon MFI-SMO to optimize the SE MFI to match the DE/DF and MFI sidewall profiles through process window conditions at the center slit. We achieved making the MFI and DE/DF sidewall difference significantly smaller than other noises which can be measured on wafer at the center slit. We evaluated the chromatic aberration impact on through slit sidewall profiles also meet the specification. The through slit matching between MFI and DE/DF was further improved by through-slit mask optimization. This is done by inserting asymmetry sub resolution assist features (SRAFs). Tachyon Optical Proximity Correction plus (OPC+) can support full chip mask corrections for full-chip HVM. The above MFI technology including Tachyon optimization capability will be verified by wafer exposure via comparison between MFI and DE wafer results.

Proceedings Article | 26 February 2021 Presentation

Full chip computational lithography for KrF multi-focal imaging (MFI) (Conference Presentation)

Will Conley, Vince Vince Plachecki, Stephen Hsu, Michael Crouse, Rongkuo Zhao, John He, Pieter Scheijgrond, Dezheng Sun, Xiaoyang Li, Dongqing Zhang, Ming-Chun Tien, Jun Ye, Rafael Howell, Chen Liu, Xiaolong Zhang, Hai Li, Zuanyi Li, Xiaobo Xie, Jing Su, Yzzer Roman

Proceedings Volume 11613, 116130E (2021) https://doi.org/10.1117/12.2585651

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