On chip light source is an indispensable component in the silicon based-photonic circuits. The emerging transition metal dichalcogenides, a prototype of van der Waals materials that features direct bandgap electronic structures, high exciton binding energy and wide compatibility with different substrates, offer opportunities for implementing novel light emitting devices. Here, we demonstrate an electrically pumped nanoemitter consisting of an atomically thin p-n junction with WS2 monolayer as the channel material and ionic liquid as the gating dielectric. Strong and stable electroluminescence can be realized by adjusting the voltages of the source and drain electrodes. Meanwhile, the p-n junction can be driven back and forth between source and drain leading to a moving light spot with controlled position. Our results provide a new approach toward highly tunable light emitting devices based on TMDCs which could enable the integration with the photonic chips for a wide range of biomedicine, sensing and lighting applications.
All-solid-state (ASS) ultraviolet (UV) laser is an organic combination of ASS laser technique and nonlinear frequency conversion technique. By using different kinds of nonlinear optical crystals and optimizing the system structure, the conversion efficiency and output power of fifth-harmonic-generation (5HG) of ASS lasers has been constantly updated. And the expected UV laser with high beam quality and stability was obtained through reasonable system design. In this paper, the research status of 5HG for ~1 μm near-infrared ASS lasers were briefly reviewed, different approaches for producing 5HG were compared, and the advantages and disadvantages of the corresponding approaches are analyzed.
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