1.064 μm, 1.319 μm and 10.6 μm laser were used to irradiate silicon-based HgCdTe CCD image system. The temperature distribution of detector induced by infrared laser irradiating in the experiment above was simulated. The influence of temperature on photoelectric parameters of HgCdTe CCD was calculated. A CCD physical model of crosstalk saturation was built and the response characteristic of CCD under the influence of thermal noise was analyzed. Result indicated that the rise of temperature induced by laser irradiating little influenced imaging effect of CCD.