With the improvement of the precision and yield of laser etched film, the key to evaluating the processing technology and judge the processing quality is how to restore the three-dimensional information of the etched film surface. However, due to the small thickness, low reflectivity , and small etching linewidth of the film, it is difficult to clearly present the three-dimensional surface morphology of the machined surface by traditional machine vision. In this paper, a method of three-dimensional surface topography reduction of PET film by combining parallel object differential confocal technology and image processing is proposed. Firstly, the differential signal curve representing the relationship between the defocusing amount u and the light intensity difference ID is calibrated, and the confocal images of the etched sample before and after focusing are obtained. The three-dimensional shape information of the sample surface at the submicron level is restored by using the functional relationship between the gray level difference and the height of the confocal image. Finally, the bubbles and bubbles on the PET film are eliminated by image processing techniques such as two-dimensional adaptive filtering Impurities and other components that affect the reduction results, the three-dimensional reduction experiment of transverse 1 um and axial 0.1 um etched morphology is completed. The method only takes 65 ms to complete a three-dimensional morphology reduction and measurement, which has the characteristics of simple operation, high resolution , and fast measurement speed. This work provides quality evaluation reference and mechanism support for high-quality thin film laser etching.
Silicon carbide belongs to the third generation of semiconductor materials. The silicon carbide substrate is the cornerstone of silicon carbide applications. It is gradually infiltrating the application in the field of new energy. Its surface roughness affects its conductivity and contact properties as a chip. Therefore, the detection of its roughness becomes more and more important. After experimentation, the existing mature commercial precision measuring instruments such as stylus profilometer and white light interferometer cannot simultaneously realize high-precision and non-destructive measurement in terms of principle and efficiency. This paper proposes a non-contact measurement method based on a parallel differential confocal microscope to measure its surface roughness. By moving the stage on the object side, the sample is imaged twice before and after the focus. The differential curve can get the height of the surface of the object, get the three-dimensional height of the surface to be measured, and then calculate the roughness value. After analyzing the measurement results, it is found that the measurement results have a certain degree of authenticity and reference. In this way, a measurement method based on a parallel confocal microscope is proposed, or the surface roughness of the silicon carbide substrate can be measured.
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