Silicon nanowires (SiNWs) have emerged as a promising material for high-sensitivity photodetection in the UV, visible
and near-infrared spectral ranges. In this work, we demonstrate novel planar SiNW phototransistors on silicon-oninsulator
(SOI) substrate using CMOS-compatible processes. The device consists of a bipolar transistor structure with an
optically-injected base region. The electronic and optical properties of the SiNW phototransistors are investigated.
Preliminary simulation and experimental results show that nanowire geometry, doping densities and surface states have
considerable effects on the device performance, and that a device with optimized parameters can potentially outperform
conventional Si photodetectors.