The radiation effects of protons will lead to degradation of dark signal of CCD. The degradation mechanism of dark signals of CCD are different due to the different proton energy. This paper investigated the radiation effects and annealing effects of CCD exposed to 3MeV and 10MeV proton. The test result shown that 3MeV proton irradiation induced CCD’s dark signal decreasing linearly following the proton fluence. The dark signal degradation induced by 10MeV was not linearly, due to the different defects introduced by proton with different energy. The results above indicates that the displacement damage behavior of defects introduced by 10MeV proton is more complex than 3MeV proton. There are more than two kinds of displacement damage defects dominating the increase of the dark signal. The results of this paper provided important reference for CCD’s proton radiation test method and evaluation technology.
Star sensor is an essential component of spacecraft attitude control system. Spatial radiation can cause star sensor performance degradation, abnormal work, attitude measurement accuracy and reliability reduction. Many studies have already been dedicated to the radiation effect on Charge-Coupled Device(CCD) image sensor, but fewer studies focus on the radiation effect of star sensor. The innovation of this paper is to study the radiation effects from the device level to the system level. The influence of the degradation of CCD image sensor radiation sensitive parameters on the performance parameters of star sensor is studied in this paper. The correlation among the radiation effect of proton, the non-uniformity noise of CCD image sensor and the performance parameter of star sensor is analyzed. This paper establishes a foundation for the study of error prediction and correction technology of star sensor on-orbit attitude measurement, and provides some theoretical basis for the design of high performance star sensor.
InP/InGaAs DHBTs and frequency dividers are irradiated by low energy proton, and displacement damage effect of the devices are analyzed. InP/InGaAs DHBTs has been made DC characteristics measurements, and the function measurement for frequency dividers has been done both before and after proton irradiation. The breakdown voltage of InP DHBTs drop to 3.7V When the fluence up to 5x10<sup>13</sup> protons/cm<sup>2</sup>. Meanwhile, the function of frequency dividers get out of order. Degradation of DC characteristics of DHBTs are due to the radiation-induced defects in the quasi neutral base and the space charge region of base-collector and base-emitter junctions. The performance deterioration of DHBTs induce the fault of frequency dividers, and prescaler may be the most sensitive circuit.