Vanadium oxide (VOx) films were deposited onto well cleaned glass substrates by bipolar pulsed reactive magnetron
sputtering at room temperature. Dependence of the structure, composition, optical and electrical properties of the films
on the pulsed power’s duty cycle has been investigated. The results from the X-ray diffraction (XRD) analysis show that
there was no remarkable change in the amorphous structure in the films with duty cycle can be observed. But chemical
analysis of the surface evaluated with x-ray photoelectron spectroscopy (XPS) indicates that decrease the duty cycle
favors to enhance the oxidation of the vanadium. The optical and electrical properties of the films were characterized by
spectroscopic ellipsometry and temperature dependent resistivity measurements, respectively. The evolution of the
transmittance, optical band gap, optical constants, resistivity and temperature coefficient of resistance (TCR) of the
deposited films with duty cycle was analyzed and discussed. In comparison with conventional DC sputtering, under the
same discharge atmosphere and power level, these parameters of the VOx films can be modified over a broad range by
duty cycle. Therefore adjusting the duty cycle during deposition, which is an effective way to control and optimize the
performances of the VOx film for various optoelectronic devices applications.
Patterning of AlCu alloy thin films is a key technology in MEMS fabrication. In this paper, reactive ion etching (RIE)
process of Al-1%Cu films was described using BCl<sub>3</sub> and Cl<sub>2</sub> as etching gases and N<sub>2</sub> and CH<sub>4</sub> as neutral gases. A four-step
process was presented to meet the etching requirements using BCl<sub>3</sub>, Cl<sub>2</sub>, N<sub>2</sub> and CF<sub>4</sub> as process gases. Optical emission
spectroscopy (OES) was used to monitor the state of the plasma in real time. The etching endpoint was detected by
detecting the spectral intensity change in the wavelength range of 395 ~ 400nm.
Vanadium oxide (VOx) thin films were deposited on different substrates by reactive DC magnetron sputtering. Silicon
substrate, Si<sub>3</sub>N<sub>4</sub>/Si substrate, glass substrate, and α-Al<sub>2</sub>O<sub>3</sub> substrate were adopted in experiments. Results revealed that
the structural features of VOx thin films strongly depend on the substrates. Analysis of square resistance and its
temperature dependence demonstrated that the crystal structure and the growth mode of VOx films play important roles
in the film electrical properties. Experiments demonstrated that substrates have great influence on the growth mode and
thermal resistance properties of VOx thin films.
The dependence of morphology and thermal resistance on the substrate temperature during the deposition of the
vanadium oxide thin films (VOx) was studied. Atomic-force microscopy (AFM) analysis results revealed that the
structural features of VOx thin films strongly depend on the substrate temperature. Analysis of square resistance and its
temperature dependence demonstrated that the difference of morphology introduced by substrate temperature plays an
important role on the electrical properties of the films. The width of the thermal resistance hysteresis loop was also
observed varied with the substrate temperature.
Vanadium oxide thin films of different thickness were deposited on P (100) silicon substrates with silicon nitride thin film layer by reactive DC magnetron sputtering method. The current-voltage (I-V) curves of the samples measured in dark environment and different intensity of light environments showed that photovoltaic effect happened when the films exposed on visible light environments. Square resistance (R<sub>s</sub>) and temperature coefficient of square resistance (TCR<sub>s</sub>) of vanadium oxide thin films were also tested in dark and light environment respectively, and the results demonstrated that the R<sub>s</sub> was reduced and TCR<sub>s</sub> was enhanced when vanadium oxide thin films are exposed on light. Such effects changes with the variation of thickness of vanadium oxide thin films.