AlInGaN Quaternary Alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited
molecular beam epitaxy (RF-MBE). Different Al content AlInGaN quaternary alloys were acquired by changing the Al
cell's temperature. The streaky RHEED pattern observed during AlInGaN growth showed the layer-by-layer growth
mode. Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were
used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the
AlInGaN with appropriate Al cell's temperature, could acquire Al/In ratio near 4.7, then could acquire better crystal and
optical quality. The samllest X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm,
respectivly. There are some cracks and V-defects occur in high-Al/In-ratio AlInGaN alloys. In the CL image, the cracks
and V-defect regions are the emission-enhanced regions. The emission enhancement of the cracked and V-defect regions
may be related to the In-segregation.
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