An electro-optic modulator based on Mach-Zehnder interferometer and embedded PIN
diode is demonstrated using silicon nanophotonic waveguide. Measurement results show that the
device has high modulation efficiency with a V<sub>π</sub>L figure of merit of 1.14 V·mm, high modulation
depth of 96.27%, and large optical bandwidth from 1500 to 1600 nm. Transmission data rate up to
0.2 Gbps is demonstrated and the rise and fall time are 3.74 ns and 640 ps, respectively.
Submicrometer channel and rib waveguides based on SOI (Silicon-On-Insulator) have been designed and fabricated with
electron-beam lithography and inductively coupled plasma dry etching. Propagation loss of 8.39dB/mm was measured
using the cut-back method. Based on these so-called nanowire waveguides, we have also demonstrated some functional
components with small dimensions, including sharp 90° bends with radius of a few micrometers, T-branches, directional
couplers and multimode interferometer couplers.